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Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties

Published online by Cambridge University Press:  15 February 2011

Nicolas Grandjean ,
Jean Massies ,
Mathieu Leroux ,
Marguerite Laügt ,
Philippe Vennéguès ,
Stéphane Dalmasso ,
Pierre Ruterana ,
Lionel Hirsch  and
Serge Barrière
Nicolas Grandjean
Affiliation:
CRHEA-CNRS, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France
Jean Massies
Affiliation:
CRHEA-CNRS, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France
Mathieu Leroux
Affiliation:
CRHEA-CNRS, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France
Marguerite Laügt
Affiliation:
CRHEA-CNRS, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France
Philippe Vennéguès
Affiliation:
CRHEA-CNRS, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France
Stéphane Dalmasso
Affiliation:
CRHEA-CNRS, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France
Pierre Ruterana
Affiliation:
LERMAT-CNRS, 6 Bd Maréchal Juin, 14050 Caen Cedex, France
Lionel Hirsch
Affiliation:
IXL, ENSERB-CNRS, 351 cours de la libération, 33405 Talence, France
Serge Barrière
Affiliation:
IXL, ENSERB-CNRS, 351 cours de la libération, 33405 Talence, France
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Abstract

The growth of InGaN layers was carried out by molecular beam epitaxy (MBE). The nitrogen precursor was ammonia. The optical and structural properties of the InGaN layers have been investigated by transmission electron microscopy (TEM), x-ray diffraction (XRD) and photoluminescence (PL). For optimized growth conditions, the PL spectrum of InGaN (x=0.1) alloy is narrow (FWHM ≤ 50 meV) and the Stokes shift measured by PL excitation is weak (<50 meV), i.e. near band edge transitions are observed. Under these conditions, flat surfaces can be obtained, and InGaN/GaN quantum wells (QWs) with sharp interfaces can be grown. On the other hand, when growth conditions depart from a narrow optimum window, the structural quality of the samples strongly degrade, whereas the luminescence spectra are dominated by deep levels, exhibiting a strong Stokes shift. MBE grown light emitting diodes (LEDs) using InGaN/GaN QWs have been fabricated. Their electroluminescence (EL) peaks at 440 nm at 300K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.59
Copyright
Copyright © Materials Research Society 1999

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