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Multi-Band Electron Paramagnetic Resonance Study of Microcrystalline and Cluster Silicon Embedded in SiO2

Published online by Cambridge University Press:  17 March 2011

Takashi Ehara ,
Tadaaki Ikoma  and
Shozo Tero-Kubota
Takashi Ehara
Affiliation:
School of Science and Engineering, Ishinomaki Senshu University Shinmoto 1, Minamisakai, Ishinomaki, Miyagi 986-8580, Japan
Tadaaki Ikoma
Affiliation:
School of Science and Engineering, Ishinomaki Senshu University Shinmoto 1, Minamisakai, Ishinomaki, Miyagi 986-8580, Japan
Shozo Tero-Kubota
Affiliation:
Institute for Chemical Reaction Science, Tohoku UniversityKatahira 2-1-1, Aoba-ku, Sendai, Miyagi 980-8577, Japan
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Abstract

Dangling bond defects (DB) in silicon microcrystallines and clusters embedded in SiO2 have been studied by X- and Q-band electron paramagnetic resonance (EPR) spectroscopy. The EPR spectra due to the DB were remarkably depending on the grain size, which was controlled by annealing temperature. The microcrystalline containing film shows a broad and unsymmetrical EPR signal at g = 2.006 with the line width of 13 G in X-band spectra. The signal can be simulated by using the anisotropic g-values of Pb center. The Si cluster samples obtained from the annealing at less than 800°C give an asymmetric EPR spectra at about g = 2.004 with the line width of about 9 G in X-band. The EPR signal due to the E' center was also observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A24.7
Copyright
Copyright © Materials Research Society 2000

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References

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