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Homogeneity of Wet Oxidation by RTP

Published online by Cambridge University Press:  22 February 2011

M. Glück ,
U. König ,
J. Hersener ,
Z. Nenyei  and
A. Tillmann
M. Glück
Affiliation:
Daimler Benz AG, Wilhelm Runge Str. 11, D-89081 Ulm, (Germany)
U. König
Affiliation:
Daimler Benz AG, Wilhelm Runge Str. 11, D-89081 Ulm, (Germany)
J. Hersener
Affiliation:
Daimler Benz AG, Wilhelm Runge Str. 11, D-89081 Ulm, (Germany)
Z. Nenyei
Affiliation:
A.S.T. elektronik GmbH, Science Park, Helmholtzstr.20, D-89081 Ulm, (Germany)
A. Tillmann
Affiliation:
A.S.T. elektronik GmbH, Science Park, Helmholtzstr.20, D-89081 Ulm, (Germany)
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Abstract

The implementation of a wet oxidation process in an RTP system using a bubbler with deionized water is described. A special process related calibration in a wet atmosphere, by means of pyrometer and thermocouple readings, allows one to improve the temperature accuracy during the oxidation to an offset of only + 1 to 2°C. High oxide growth rates, up to a factor of 1.8 above literature data have been achieved. Wet and dry RTO oxides are compared and related to the expectations from growth models. Effects of growth time (10 s to 4 min), growth temperature (675°C-950°C), substrate orientation (100,111), preparation (e.g. HF) and bubbler temperature (20°C-90°C) are presented. The uniformity of oxides on 4 and 6 inch diameter wafers are discussed. Preferentially by the use of a silicon guard ring and by adjusting lamp power and gas flow rates excellent results concerning uniformity (standard deviations 2σ: 1-2 %) and reproducibility (variation of 0.5 to 0.75 % at least over 12 wafers) are obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 215
Copyright
Copyright © Materials Research Society 1994

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References

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