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Combined Application of Section and Projection Topography to Defect Analysis in PVT-Grown 4H-SiC

Published online by Cambridge University Press:  13 June 2012

H. Wang ,
F. Wu ,
S. Byrappa ,
S. Shun ,
B. Raghothamachar ,
M. Dudley ,
E. K. Sanchez ,
G. Chung ,
D. Hansen  and
S. G. Mueller
...Show all authors
H. Wang
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY, USA 11794-2275
F. Wu
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY, USA 11794-2275
S. Byrappa
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY, USA 11794-2275
S. Shun
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY, USA 11794-2275
B. Raghothamachar
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY, USA 11794-2275
M. Dudley*
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY, USA 11794-2275
E. K. Sanchez*
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, USA 48686-0994
G. Chung
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, USA 48686-0994
D. Hansen
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, USA 48686-0994
S. G. Mueller
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, USA 48686-0994
M. J. Loboda
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, USA 48686-0994
*
amdudley@notes.cc.sunysb.edu
bedward.sanchez@dowcorning.com
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Abstract

The combined application of section and projection topography carried out using synchrotron white beam radiation can be a powerful tool for the determination of the three-dimensional configurations of defects in single crystals. In this paper, we present examples of the application of this combination of techniques to the analysis of defect configurations in PVT-grown 4H-SiC wafers cut perpendicular and parallel to the growth axis. Detailed correlation between section and projection topography of threading screw dislocations (TSDs) is presented with particular emphasis being laid on the determination of the signs of the dislocations. Further, information can also be determined regarding the position of the dislocations within the crystal depth. In addition, similar correlation is presented for threading edge dislocations (TEDs) and basal plane dislocations (BPDs). The section topography images of dislocations can comprise direct, intermediary and dynamical contrast and all three types are observed. The application to the study of stacking faults will be also discussed in detail.

Keywords

x-ray diffraction (XRD)semiconductingdefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1433: Symposium H – Silicon Carbide 2012—Materials, Processing and Devices , 2012 , mrss12-1433-h03-06
Copyright
Copyright © Materials Research Society 2012

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References

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