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Charge Transient Spectroscopy Study Of Deep Centers In Cvd Diamond And Diamond-Like Films

Published online by Cambridge University Press:  15 February 2011

V.I. Polyakov
Affiliation:
Institute of Radio Eng. & Electronics, RAS, 11 Mohovaya str., Moscow 103907, Russia, vip197@ire216.msk.su
A.I. Rukovishnikov
Affiliation:
Institute of Radio Eng. & Electronics, RAS, 11 Mohovaya str., Moscow 103907, Russia, vip197@ire216.msk.su
N.M. Rossukanyi
Affiliation:
Institute of Radio Eng. & Electronics, RAS, 11 Mohovaya str., Moscow 103907, Russia, vip197@ire216.msk.su
V.P. Varnin
Affiliation:
Institute of Radio Eng. & Electronics, RAS, 11 Mohovaya str., Moscow 103907, Russia, vip197@ire216.msk.su
I.G. Teremetskaya
Affiliation:
Institute of Physical Chemistry, RAS, Moscow, Russia
B.L. Druz
Affiliation:
Veeco Instruments Inc., Plainview, NY
E. Ostan
Affiliation:
Veeco Instruments Inc., Plainview, NY
A. Hayes
Affiliation:
Veeco Instruments Inc., Plainview, NY
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Abstract

The parameters of trapping centers in CVD diamond and Diamond-Like Carbon (DLC) films were studied by Charge Deep Level Transient Spectroscopy (Q-DLTS). The concentrations, activation energies, captures cross-section and location of the trapping centers were determined. The influence of post deposition heat treatment on the defect center parameters was studied. The Q-DLTS measurements showed that micro defects are acting as point trapping centers and have the continuous energy spectrum with one or two maximums at different energies. The nature of the trapping centers is discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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