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Threshold Energy for Generating Damage with Cluster Ion Irradiation

Published online by Cambridge University Press:  11 February 2011

Toshio Seki ,
Takaaki Aoki ,
Atsuko Nakai ,
Jiro Matsuo  and
Gikan H. Takaoka
Toshio Seki
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Kyoto, 606–8501, JAPAN Collaborative Research Center for Cluster Ion Beam Process Technology
Takaaki Aoki
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Kyoto, 606–8501, JAPAN Collaborative Research Center for Cluster Ion Beam Process Technology
Atsuko Nakai
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Kyoto, 606–8501, JAPAN
Jiro Matsuo
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Kyoto, 606–8501, JAPAN
Gikan H. Takaoka
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Kyoto, 606–8501, JAPAN
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Abstract

In order to understand the damage formation by cluster ion irradiation, Si substrates were irradiated with Ar cluster ions at the acceleration energy of 1–20keV. The mean size of cluster was about 3000 atoms. The amount of damage after Ar cluster ion irradiation was measured with Rutherford backscattering spectrometry (RBS). The amount of damage was decreased with decrease of the energy and no damage formed at less than 2keV. This energy of 2keV represents the threshold energy to generate damage with the cluster size of 3000. According to Molecular dynamics (MD) simulation, the damage formation with cluster ion irradiation also depends on cluster size. The size dependence of amount of damage has been investigated experimentally. The cluster size distribution could be changed with the ionization condition and could be measured using Time-of-Flight (TOF) method. The threshold energy was increased with cluster size. These results indicate that undamaged films can be created by using large size of cluster ion with low acceleration energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 749: Symposium W – Morphological and Compositional Evolution of Thin Films , 2002 , W17.13
Copyright
Copyright © Materials Research Society 2003

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References

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