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Influence of Oxygen Annealing on Electrical Properties of ZnO:Cl Thin Films

Published online by Cambridge University Press:  01 February 2011

Tamar Tchelidze ,
Ekaterine Chikoidze ,
Francois Jomard ,
Ouri Gorochov  and
Pierre Galtier
Tamar Tchelidze
Affiliation:
t_chelidze@hotmail.com, Tbilisi State University, Faculty of Physics, Tbilisi, N/A, Georgia
Ekaterine Chikoidze
Affiliation:
ekaterina.chikoidze@c,rs-bellevue.fr, CNRS, FGEMAC, 1.A.Briand, Meudon, N/A, France
Francois Jomard
Affiliation:
jrancois.jomard@cnrs-bellevue.fr, CNRS, GEMAC, 1.A.Briand, Meudon, N/A, France
Ouri Gorochov
Affiliation:
ouri.gorochov@cnrs-bellevue.fr, CNRS, GEMAC, 1.A.Briand, Meudon, N/A, France
Pierre Galtier
Affiliation:
pierre.galtier@cnrs-bellevue.fr, CNRS, GEMAC, 1.A.Briand, Meudon, N/A, France
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Abstract

The influence of oxygen treatment on carrier transport properties of pure ZnO and ZnO:Cl thin films grown by MOCVD were studied. The experimentally obtained values of carrier concentrations after oxyden treatment at different temperatures, were compared with the the results obtained from thermodynemical analysis of the system: ZnO:Cl-Oxyen vapour pressure, using method of quasi-chemical reactions (QCR).

Keywords

annealingHall effectoxide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F01-07
Copyright
Copyright © Materials Research Society 2007

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