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Defect-Induced Shifts in the Elastic Constants of Silicon

Published online by Cambridge University Press:  11 February 2011

Clark L. Allred
Affiliation:
The Charles Stark Draper Laboratory, Inc., 555 Technology Square, Cambridge, MA 02139–3563, U.S.A. Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139–4307, U.S.A. Air Force Institute of Technology, 2950 P Street, Wright-Patterson AFB, OH 45433–7765, U.S.A.
Jeffrey T. Borenstein
Affiliation:
The Charles Stark Draper Laboratory, Inc., 555 Technology Square, Cambridge, MA 02139–3563, U.S.A.
Marc S. Weinberg
Affiliation:
The Charles Stark Draper Laboratory, Inc., 555 Technology Square, Cambridge, MA 02139–3563, U.S.A.
Xianglong Yuan
Affiliation:
The Charles Stark Draper Laboratory, Inc., 555 Technology Square, Cambridge, MA 02139–3563, U.S.A.
Martin Z. Bazant
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139–4307, U.S.A.
Linn W. Hobbs
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139–4307, U.S.A.
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Abstract

As MEMS devices become ever more sensitive, even slight shifts in materials properties can be detrimental to device performance. Radiation-induced defects can change both the dimensions and mechanical properties of MEMS materials, which will be of concern to designers of MEMS for applications involving radiation exposure, such as those in a reactor environment or in space. We have performed atomistic simulations of the effect that defects and amorphous regions, such as could be produced by radiation damage, have on the elastic constants of silicon. We have then applied the results of the elastic constant shift calculations to a hypothetical MEMS device, and calculated the difference that would be generated by this effect.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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