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Growth of Carbon-Nitrogen Films with a Broad Beam RF Ion Source

Published online by Cambridge University Press:  21 March 2011

David C. Ingram ,
William C. Lanter ,
Charles A. DeJoseph  and
Asghar Kayani
David C. Ingram
Affiliation:
Condensed Matter and Surface Science Program, Department of Physics and Astronomy, Edwards Accelerator Laboratory, Ohio University, Athens OH 45701
William C. Lanter
Affiliation:
Innovative Scientific Solutions, Inc., 2766 Indian Ripple Rd., Beavercreek, OH 45440
Charles A. DeJoseph
Affiliation:
Air Force Research Laboratory (AFRL/PRPE), Wright-Patterson AFB, OH 45433
Asghar Kayani
Affiliation:
Condensed Matter and Surface Science Program, Department of Physics and Astronomy, Edwards Accelerator Laboratory, Ohio University, Athens OH 45701
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Abstract

With the lack of suitable native oxides, gallium nitride based semiconductor devices will need other materials for dielectric, insulating and passivating layers in a variety of device applications. A carbon-nitrogen film is a possible candidate for this application. Insulating films can be made of this material with a variety of techniques. Ion beam techniques are a well accepted way to demonstrate the existence of a material with certain properties and a way to establish the range of those properties in the material. Ion beam assisted deposition has been used in this work to fabricate materials with various stoichiometries in order to determine the range of properties available for this material.

Thin films containing predominantly carbon and nitrogen have been grown using a mixture of methane and nitrogen from a 20 cm rf ion source. The stoichiometry of the films has been measured with Rutherford Backscattering Spectroscopy (RBS), and Elastic Recoil Spectroscopy (ERS). The effect of nitrogen-to-methane ratio, ion energy, and RF power on the film composition, properties, and growth rate is reported together with an analysis of the anticipated growth mechanics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I3.2.1
Copyright
Copyright © Materials Research Society 2002

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