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Stress evolution in passivated thin films of Cu on silica substrates

Published online by Cambridge University Press:  31 January 2011

Y-L. Shen
Affiliation:
Departments of Materials Science and Mechanical Engineering, M.I.T., Cambridge, Massachusetts 02139
S. Suresh
Affiliation:
Departments of Materials Science and Mechanical Engineering, M.I.T., Cambridge, Massachusetts 02139
M. Y. He
Affiliation:
M.I.T.–Harvard Program on Modeling of Materials, Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
A. Bagchi
Affiliation:
M.I.T.–Harvard Program on Modeling of Materials, Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
O. Kienzle
Affiliation:
Max Planck Institut f¨ur Metallforschung, Seestrasse 92, Stuttgart, Germany
M. Rühle
Affiliation:
Max Planck Institut f¨ur Metallforschung, Seestrasse 92, Stuttgart, Germany
A. G. Evans
Affiliation:
M.I.T.–Harvard Program of Modeling of Materials, Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
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Extract

Stresses supported by thin films of Cu passivated by SiOx have been measured upon thermal cycling. Very high stresses have been found, approaching 1 GPa in the thinnest (40 nm) films. Strengthening beyond yield occurs upon both cooling and heating, indicative of strong strain hardening in the Cu. The hardening continues down to at least 77 K. The yielding behavior of the Cu films has been characterized by a kinematic constitutive law, with exceptional strain hardening and a conventional temperature-dependent yield strength. The physical basis for this behavior is ascribed to confined shear bands in the Cu that induce large back stress. Transmission electron microscopy reveals aligned dislocations, which seemingly dictate the inelastic deformations in the shear bands.

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Articles
Copyright
Copyright © Materials Research Society 1998

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