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Microstructure and Physical Properties of GaN Films on Sapphire Substrates

Published online by Cambridge University Press:  03 September 2012

Zhizhong Chen ,
Rong Zhang ,
Jianming Zhu ,
Bo Shen ,
Yugang Zhou ,
Peng Chen ,
Weiping Li ,
Yi Shi ,
Shulin Gu  and
Youdou Zheng
Zhizhong Chen
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P.R.China
Rong Zhang
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P.R.China
Jianming Zhu
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P.R.China
Bo Shen
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P.R.China
Yugang Zhou
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P.R.China
Peng Chen
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P.R.China
Weiping Li
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P.R.China
Yi Shi
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P.R.China
Shulin Gu
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P.R.China
Youdou Zheng
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P.R.China
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Abstract

Transmission electron microscopy (TEM), x-ray diffraction (XRD), photoluminescence (PL) and Raman scattering measurements were applied to study the correlation between the microstructure and physical properties of the GaN films grown by light radiation heating metalorganic chemical vapor deposition (LRH-MOCVD), using GaN buffer layer on sapphire substrates. When the density of the threading dislocation (TD) increases about one order of magnitude, the yellow luminescence (YL) intensity is strengthened from negligible to two orders of magnitude higher than the band edge emission intensity. The full width of half maximum (FWHM) of the GaN (0002) peak of the XRD rocking curve was widened from 11 min to 15 min, and in Raman spectra, the width of E2 mode is broadened from 5 cm-1 to 7 cm-1. A “zippers” structure at the interface of GaN/sapphire was observed by high-resolution electron microscope (HREM). Furthermore the origins of TD and relationship between physical properties and microstructures combining the growth conditions are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.50
Copyright
Copyright © Materials Research Society 1999

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