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Bulk Crystal Growth of Hg1−xCdxTe for Avalanche Photodiode Applications*
Published online by Cambridge University Press: 25 February 2011
Abstract
High gap Hg1−xCdxTe (MCT) crystal is grown by a solvent method using a travelling heater zone. The use of the solvent zone permits a low temperature and low mercury pressure growth of MCT in a large composition range. In the Cadmium rich alloy range the MCT material exhibits a large spin orbit coupling leading to a resonance at Eg = ΔO. Due to this particular resonance effect the ionization coefficient of hole is higher than that of the electron, resulting in a low exess noise factor in the avalanche photodiodes whose bandgap energy is close to the spin orbit splitting ΔO.
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- Copyright © Materials Research Society 1987
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Work partly supported by the DAII
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