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Defects Induced by Helium Implantation: Interaction with Boron and Phosphorus

Published online by Cambridge University Press:  01 February 2011

F. Cayrel ,
D. Alquier ,
F. Roqueta ,
L. Ventura ,
C. Dubois  and
D. Mathiot
F. Cayrel
Affiliation:
LMP, 16, rue Pierre et Marie Curie, B.P. 7155, F37071 TOURS Cedex, France STMicroelectronics, 16, rue Pierre et Marie Curie, B.P. 7155, F37071 TOURS Cedex, France
D. Alquier
Affiliation:
LMP, 16, rue Pierre et Marie Curie, B.P. 7155, F37071 TOURS Cedex, France
F. Roqueta
Affiliation:
STMicroelectronics, 16, rue Pierre et Marie Curie, B.P. 7155, F37071 TOURS Cedex, France
L. Ventura
Affiliation:
LMP, 16, rue Pierre et Marie Curie, B.P. 7155, F37071 TOURS Cedex, France
C. Dubois
Affiliation:
L.P.M. - INSA Lyon, 20 rue A. Einstein, F-69621 Villeurbanne Cedex, France.
D. Mathiot
Affiliation:
PHASE / CNRS, 23 rue du loess, B.P. 20, F67037 Strasbourg Cedex, France
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Abstract

High dose He implantation, followed by a thermal annealing, is a suitable technique for metal gettering. Nevertheless, a strong interaction between the dopants and the defect layer has been evidenced. This can largely influence the dopant distribution. In order to study this interaction, p and n-type samples uniformly doped were implanted with helium (40 keV, 5×1016 He+.cm-2) and furnace annealed for various times and temperatures. In this paper, we shed light on the evolution of the dopant segregation. Using isochronal treatment, we found a large dependence of the dopant gettering phenomenon upon annealing temperature. Moreover, stability of the gettered fraction is observed for isothermal annealing. This study permits also to investigate the origin of the trapping mechanism involved for both boron and phosphorus.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F4.3
Copyright
Copyright © Materials Research Society 2002

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