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The effect of Porosity of Metal Zinc Films on the Formation of ZnO Prepared by Thermal Oxidation

Published online by Cambridge University Press:  01 February 2011

Liang-chiun Chao  and
Chung-chi Liau
Liang-chiun Chao
Affiliation:
lcchao@mail.ntust.edu.tw, National Taiwan University of Science and Technology, Electronic Engineering, #43 KeeLung Road, Section 4, Taipei, 106, Taiwan, +886-2-2737-6369, +886-2-2737-6424
Chung-chi Liau
Affiliation:
M9402318@mail.ntust.edu.tw, National Taiwan University of Science and Technology, Electronic Engineering Department, #43 KeeLung Road, Section 4, Taipei, 106, Taiwan
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Abstract

ZnO thin films have been prepared by thermal oxidation of metal zinc films with different porosity. High and low porosity metal zinc films are prepared by DC magnetron sputtering and capillaritron ion beam sputtering, respectively. Near bandgap UV emission of ZnO thin films prepared from thermal oxidation of the low porosity film exhibit a maximum PL intensity after thermal oxidation at 410°C, while ZnO films prepared by thermal oxidation of the high porosity films exhibit a maximum PL intensity at oxidation temperature of 900°C. SEM micrographs indicate that ZnO prepared by thermal oxidation of low porosity films have a smooth surface morphology after thermal oxidation at 410°C, while ZnO prepared by thermal oxidation of high porosity zinc films exhibit a grain size of ∼ 800 nm after thermal oxidation at 1000°C.

Keywords

Znoxidesputtering
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1012: Symposium Y – Thin-Film Compound Semiconductor Photovoltaics-2007 , 2007 , 1012-Y03-17
Copyright
Copyright © Materials Research Society 2007

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