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Electronic and Atomic Structure of Ge2Sb2Te5 phase change memory material

Published online by Cambridge University Press:  01 February 2011

John Robertson ,
Ka Xiong  and
Paul Peacock
John Robertson
Affiliation:
jr@eng.cam.ac.uk, Cambridge University, Engineering, Trumpington St, Cambridge, N/A, CB2 1PZ, United Kingdom, 44 1223 748331, 44 1223 332662
Ka Xiong
Affiliation:
kx200@eng.cam.ac.uk, Cambridge University, Engineering, Cambridge, N/A, CB2 1PZ, United Kingdom
Paul Peacock
Affiliation:
pwp10@eng.cam.ac.uk, Cambridge University, Engineering, Cambridge, N/A, CB2 1PZ, United Kingdom
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Abstract

Electronic structure calculations are presented for various model structures of the crystalline and amorphous phases of Ge2Sb2Te5 (GST). The structures are all found to possess a band gap of order 0.5 eV, indicating closed shell behaviour. It is pointed out that structural vacancies in A7-like GST are not electronically active. In addition, A7-like structures do not support valence alternation pair (VAP) defects, which are one model of the conduction processes in the glassy phase in non-volatile memories.

Keywords

electrical propertiesphase transformationstructural
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 918: Symposium H – Chalcogenide Alloys for Reconfigurable Electronics , 2006 , 0918-H01-02
Copyright
Copyright © Materials Research Society 2006

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References

1. Kolobov, A, et al, Jpn J App Phys 44, 3345 (2005).Google Scholar
2. Lai, S, Technical Digest IEDM (2003) p255 (IEEE)Google Scholar
3. Kalb, J, Spaepen, F, Wuttig, M, J App Phys 93, 2389 (2003).Google Scholar
4. Kalb, J, Spaepen, F, Pedersen, T P L, Wuttig, M, J App Phys 94, 4908 (2003).Google Scholar
5. Njoroge, W K, Woltens, H W, Wuttig, M, J Vac Sci Technol A 20, 230 (2002).Google Scholar
6. Yamada, N, Matsunaga, T, J App Phys 88, 7020 (2000).Google Scholar
7. Kolobov, A, Fons, P, Frenkel, A I, Ankudinov, A L, Tominaga, J, Uruga, T, Nature Mats 3, 703 (2004).Google Scholar
8. Baker, D A, Agarwal, S C, Lucovsky, G, Paesler, M A, Taylor, P C, preprintGoogle Scholar
9. Kastner, M, Adler, D, Fritzsche, H, Phys Rev Lett 37, 1504 (1976).Google Scholar
10. Milman, V, Winkler, B, White, J A, Pickard, C J, Payne, M C, Int J Quantum Chem 77, 895 (2000).Google Scholar
11. Vanderbilt, D, Phys Rev B 41, 7892 (1990).Google Scholar
12. Kato, T, Tanaka, K, Jpn J App Phys 44, 7340 (2005).Google Scholar
13. Welnic, M, Pamungkas, A, Detemple, R, Steimer, C, Blugel, S, Wuttig, M, Narure Mats 5, 56 (2006).Google Scholar
14. Raty, J Y, Godlevsky, V, Ghosez, P, Bichara, C, Gaspard, J P, Chelikowsky, J R, Phys Rev Lett 85, 1950 (2000).Google Scholar
15. Raty, J Y, Godlevsky, V V, Gaspard, J P, Cbichara, Bionducci, M, Bellisent, R, Ceolin, R, Chelikowsky, J R, Phys Rev B 65, 115205 (2002).Google Scholar
16. Bichara, C, Johnson, M, Raty, J V, Phys Rev Lett 95, 267801 (2005).Google Scholar
17. Sun, Z, Zhou, J, Ahuja, R, Phys Rev Lett 96, 055507 (2006).Google Scholar
18. Hosokawa, S et al, J Phys Conden Mat 10, 1931 (1998).Google Scholar
19. Littlewood, P B, J Phys C 13, 4855 (1980).Google Scholar
20. Lucovsky, G, White, R M, Phys Rev B 8, 660 (1973).Google Scholar
21. Edwards, A H, Pineda, A C, Schulz, P A et al, Phys Rev B 73, 045210 (2006).Google Scholar
22. Pirovano, A, Lacaita, A L, Benvenuti, A, Pellizzer, F, Bez, R, IEEE Trans ED 51, 452 (2004).Google Scholar