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Raman and Secondary Ion Mass Spectroscopy of Epitaxial CdTe/InSb Interfaces Grown by Low-Energy Bias Sputtering

Published online by Cambridge University Press:  25 February 2011

Suhit R. Das ,
David J. Lockwood ,
Stephen J. Rolfe ,
John P. McCaffrey  and
John G. Cook
Suhit R. Das
Affiliation:
Institute For Microstructural Sciences, National Research Council, Ottawa, Ontario, CanadaK1A 0R6
David J. Lockwood
Affiliation:
Institute For Microstructural Sciences, National Research Council, Ottawa, Ontario, CanadaK1A 0R6
Stephen J. Rolfe
Affiliation:
Institute For Microstructural Sciences, National Research Council, Ottawa, Ontario, CanadaK1A 0R6
John P. McCaffrey
Affiliation:
Institute For Microstructural Sciences, National Research Council, Ottawa, Ontario, CanadaK1A 0R6
John G. Cook
Affiliation:
Institute For Microstructural Sciences, National Research Council, Ottawa, Ontario, CanadaK1A 0R6
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Abstract

Heteroepitaxial (100)CdTe || (100)InSb structures have been fabricated by growing CdTe epilayers, at growth temperatures below 200°C, on single crystal InSb substrates by low-energy bias sputtering. Controlled low-energy ion bombardment at the substrate was employed to clean the growth surface in-situ just prior to film deposition and to modify the growth kinetics and enhance adatom mobility during deposition. Raman spectroscopy of the interface revealed no evidence of In2Te3 and secondary ion mass spectroscopy showed the interface to be chemically abrupt.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 245
Copyright
Copyright © Materials Research Society 1991

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References

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