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Synchrotron Topography Studies of Growth and Deformation-Induced Dislocations in 4H-SiC

Published online by Cambridge University Press:  13 June 2012

M. Dudley ,
H. Wang ,
F. Wu ,
S. Byrappa ,
S. Shun ,
B. Raghothamachar ,
E. K. Sanchez ,
G. Chung ,
D. Hansen  and
S. G. Mueller
...Show all authors
M. Dudley*
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY, USA 11794-2275
H. Wang
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY, USA 11794-2275
F. Wu
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY, USA 11794-2275
S. Byrappa
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY, USA 11794-2275
S. Shun
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY, USA 11794-2275
B. Raghothamachar
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY, USA 11794-2275
E. K. Sanchez*
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, USA 48686-0994
G. Chung
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, USA 48686-0994
D. Hansen
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, USA 48686-0994
S. G. Mueller
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, USA 48686-0994
M. J. Loboda
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, USA 48686-0994
*
amdudley@notes.cc.sunysb.edu
bedward.sanchez@dowcorning.com
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Abstract

Synchrotron topography studies are presented of the behavior of growth dislocations and deformation-induced dislocations in 4H-SiC single crystals. The growth dislocations include those in threading orientation with line directions approximately along c with Burgers vectors of a, c, and na+mc (where n and m are integers) while the deformation-induced dislocations include those with line directions confined to the basal plane with Burgers vectors of a and Shockley partial dislocations with Burgers vectors of 1/3<1-100> as well as those with line directions in the {1-100} prismatic planes with Burgers vectors of a. Processes leading to the nucleation of the growth dislocations are discussed as well as their deflection onto the basal plane during crystal growth in a reversible process. This latter process can lead to the conversion of segments of the deflected growth dislocations into deformation induced dislocations. In some cases this can lead to dislocation multiplication via the Hopping Frank-Read source mechanism and in others to the motion of single Shockley partial dislocations leading to Shockley stacking fault expansion. Studies are also presented of interactions between threading growth dislocations with c-component of Burger’s vector facilitated by climb processes which are mediated by interactions with non-equilibrium concentrations of vacancies. This can lead to reactions whereby complete or partial dislocation Burgers vector annihilation occurs.

Keywords

x-ray diffraction (XRD)dislocationsnucleation & growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1433: Symposium H – Silicon Carbide 2012—Materials, Processing and Devices , 2012 , mrss12-1433-h03-03
Copyright
Copyright © Materials Research Society 2012

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References

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