Hostname: page-component-7bb8b95d7b-cx56b Total loading time: 0 Render date: 2024-09-24T09:33:52.179Z Has data issue: false hasContentIssue false

Fast Photodarkening in Amorphous and Liquid Chalcogenide

Published online by Cambridge University Press:  01 February 2011

Yoshifumi Sakaguchi
Affiliation:
yoshifumi.sakaguchi@materials.mbox.media.kyoto-u.ac.jp, Kyoto University, Graduate School of Engineering, Yoshida-Honmachi, Sakyo-ku, Kyoto, Kyoto, 606-8501, Japan
Kozaburo Tamura
Affiliation:
tamura@materials.mbox.media.kyoto-u.ac.jp, Kyoto University, Graduate School of Engineering, Yoshida-Honmachi, Sakyo-ku, Kyoto, Kyoto, 606-8501, Japan
Get access

Abstract

Transient photo-induced optical absorption in amorphous and liquid As2Se3 was investigated using a nanosecond pulsed laser and a specially designed optical cell. The measurements have been performed in the second and minute domain and the nanosecond and microsecond domain. From the measurements in the second and minute domain using repeated illumination, we observed the accumulation of photo-induced absorption and the decay after stopping the illumination. The durable photodarkening was also observed after the decay. The accumulated photoinduced change becomes smaller with increasing temperature and approaches to be zero around the glass transition temperature. From the measurements in the nanosecond and microsecond domain, the transient photodarkening in the time domain responded for each pulsed laser was observed. This fast photodarkening was observed even in the liquid state. This is contrast to the cases of the durable photodarkening and the transient photodarkening in the second and minute domain. The origin of the observed photoinduced changes is discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Tanaka, K., J. Non-Cryst. Solids 35&36, 1023 (1980).Google Scholar
2. Hamanaka, H., Tanaka, K., Matsuda, A. and Iizima, S., Solid State Com. 19, 499 (1976).Google Scholar
3. Tanaka, K., Appl. Phys. Lett. 26, 243 (1975).Google Scholar
4. Sakaguchi, Y. and Tamura, K., Rev. Sci. Instrum. 71, 494 (2000).Google Scholar
5. Mott, N. F. and Davis, E. A., Electronic Processes in Non-Crystalline Materials 2nd edn (Clarendon, Oxford, 1979) p.290, 291.Google Scholar
6. Hosokawa, S., Sakaguchi, Y., Hiasa, H. and Tamura, K., J. Phys.: Condens. Matter 3, 6673 (1991).Google Scholar
7. Ganjoo, A., Shimakawa, K., Kitano, K. and Davis, E. A., J. Non-Cryst. Solids 299–302, 917 (2002).Google Scholar
8. Ganjoo, A. and Shimakawa, K., J. Optoelectron. Adv. Mater. 4, 595 (2002).Google Scholar
9. Kimura, K., Nakata, H., Murayama, K. and Ninomiya, T., Solid State Com. 40, 551 (1981).Google Scholar
10. Taylor, P. C., Bishop, S. G. and Mitchell, D. L., Phys. Rev. Lett. 27, 414 (1971).Google Scholar
11. Uemura, O., Sagara, Y., Muno, D. and Satow, T., J. Non-Cryst. Solids 30, 155 (1978).Google Scholar
12. Hosokawa, S., Sakaguchi, Y. and Tamura, K., J. Non-Cryst. Solids 150, 35 (1992).Google Scholar
13. Li, J. and Drabold, D. A., Phys. Rev. Lett. 85, 2785 (2000).Google Scholar