The electric-pulse–induced resistance switching of the Ag–La0.7Ca03MnO3(LCMO)–Pt heterostructures was studied. The multilevel resistance switching (MLRS), in which several resistance states can be obtained, was observed in the switching from high to low resistance state (HRS → LRS) by applying electric pulse with various pulse voltages. The threshold pulse voltages of MLRS are related to the initial resistance values as well as the switching directions. On the other hand, the resistance switching behavior from low to high resistance states (LRS → HRS) shows unobvious MLRS. According to the resistance switching behavior in serial and parallel modes, MLRS was explained by the parallel effect of multifilament forming/rupture in the Ag–LCMO interface layer. The present results suggest a possible application of Ag–LCMO–Pt heterostructures as multilevel memory devices.