In this paper, we designed two different configurations with locally isothermal sidewalls, where the temperature is set to be the bulk temperature, to control the large-scale circulation in turbulent Rayleigh–Bénard convection, namely two-point control and four-point control. At fixed Rayleigh number $Ra=10^8$ and Prandtl number $Pr=2$, a series of direct numerical simulations are performed on both two-dimensional (2-D) and quasi-two-dimensional (quasi-2-D) cavities with both types of control, where the width of the control area is fixed at $\delta _c=0.05$ and the vertical distance from the cavity centre $h_c$ varies from 0 to 0.45 with an interval of 0.05. Our results show that the control effect depends on $h_c$, the control configurations as well as the flow dimensions. For 2-D cavities, both two-point control and four-point control suppress the flow reversal when $h_c \geq 0.05$, accompanied by the enhancement of vertical heat transfer and the strength of the large-scale circulation. For quasi-2-D cavities, the suppression of the flow reversals is obvious with two-point control and $h_c\geq 0.05$, while the effect is rather limited with four-point control. Further experiments with $Pr=5.7$ and $Ra$ up to $7.36\times10^8$ show that two-point control with $h_c=0.15$ can effectively suppress the flow reversal, while two-point control with $h_c=0$ can suppress the reversals at low $Ra=1.93\times 10^8$ and activate them at higher $Ra=7.36\times 10^8$, which agrees well with our numerical simulations.

HfO2–Sm3TaO7 ceramics are prepared through a solid-state reaction method. The X-ray diffraction and structural refinement show that the phase structures of HfO2–Sm3TaO7 ceramics are an ordered orthorhombic phase and the space groups are belonging to Ccmm. The degree of the structural disorder increases with increasing HfO2 content. The solid solution mechanism reveals that Hf4+ exists in the form of interstitial ions that cause crystal expansion when the doping content is less than 4 mol%. When the doping concentration of HfO2 ≥ 4 mol%, the Hf4+ ions can substitute an equal number of Sm3+ and Ta5+ ions. The phase transition of Sm3TaO7 ceramics is removed with increasing HfO2 content, and the 8 mol% HfO2–Sm3TaO7 ceramics have a high thermal expansion coefficient of 10.2 × 10−6 K−1 at 1200 °C. The 2 mol% HfO2–Sm3TaO7 ceramics have the lowest thermal conductivity (1.03 W/m K at 900 °C), which is lower than previous research of the 7–8 YSZ. The outstanding thermophysical properties of HfO2–Sm3TaO7 ceramics indicate that they are potential thermal-barrier coating materials.

In this paper, we report that reversals of large-scale circulation in two-dimensional Rayleigh–Bénard convection could be suppressed or enhanced by imposing local constant-temperature control on sidewalls. When the control area is away from the centre of the sidewalls, the control can successfully eliminate the flow reversal if the size of the control region is large enough. With a proper location, the width can be as small as 1 % of the system size. When the control region is located around the centre, the control may enhance the flow reversal. It may also stimulate the occurrence of a double-roll mode when the control is located in the centre. Explanations are also discussed based on the twofold effects of the control region on the nearby plumes and the concept of symmetry. The present work provides a new way to control the flow reversals in Rayleigh–Bénard convection through modifying sidewall boundary conditions.

SmTaO4 ceramics have excellent high-temperature phase stabilities and mechanical properties and show great potential for use as next-generation thermal barrier coating (TBC) materials. CeO2–SmTaO4 ceramics are prepared via high-temperature solid–state reaction. It retains a single monoclinic phase structure. Ce4+ was reduced to Ce3+ by high-temperature deoxidation, and the Ce3+ ions substitute for an equal number of Sm3+ ions. The CeO2–SmTaO4 ceramics had lower thermal conductivities [1.09–2.75 W/(m K)] than yttria-stabilized zirconia (YSZ) [2.1–2.7 W/(m K)] at 100–800 °C, which decreased dramatically with increasing temperature. SmTaO4 doped with 2% CeO2 had lower thermal conductivity [1.09 W/(m K), 800 °C] than SmTaO4 [1.42 W/(m K), 800 °C] and 2% ZrO2-doped SmTaO4 ceramics [1.22 W/(m K), 800 °C]. The low thermal conductivity is attributed to Ce3+ substitution for an equal number of Sm3+ ions, and because Ce3+ ions are the strongest phonon scattering centers, they can decrease the phonon mean free path effectively. The thermal expansion coefficient of 8% CeO2–SmTaO4 ceramics is approximately 10.3 × 10−6 K−1 at 1200 °C, which is slightly higher than that of both YSZ (10.0 × 10−6 K−1) and SmTaO4 (9.58 × 10−6 K−1). The outstanding thermophysical properties indicate that CeO2–SmTaO4 ceramics are potential TBC materials.

Process parameters (laser power and scanning speed) for H13 steel specimens produced by selective laser melting (SLM) are optimized, and microstructural characteristics and mechanical properties are investigated. The optimum process parameters are a laser power of 170 W and a scanning speed of 400 mm/s according to the maximum relative density of 99.2%. The microstructure consists of cellular grains and columnar crystal, which are composed of lath martensite and retained austenite, and there are no carbides or other second-phase particles present. The size of cellular grains is 1 μm. Compared with the common processed (forged and heat-treated) H13, SLM H13 has similar microhardness (561 HV) and tensile strength (1909 MPa) values. However, the elongation (12.4%) is a factor of ∼3 times higher and the impact energy (14.4 J) of the SLM specimen is somewhat lower. The relationship between the microstructure and mechanical properties is discussed. Fine grains and no second-phase precipitation determine the strength and plasticity of SLM samples.

An adaptive multi-penalty discontinuous Galerkin method (AMPDG) for the diffusion problem is considered. Convergence and quasi-optimality of the AMPDG are proved. Compared with the analyses for the adaptive finite element method or the adaptive interior penalty discontinuous Galerkin method, extra works are done to overcome the difficulties caused by the additional penalty terms.

The thermoelectric properties of Pb9.6SbyTe10−xSex were investigated in the intermediate temperature range of 300 – 700 K. The effect of the variation of Sb content (y) on the electronic properties of the materials is remarkable. Samples with compositions Pb9.6Sb0.2Te10−xSex (y = 0.2) show the best combination of low thermal conductivity with moderate electrical conductivity and thermopower. For Pb9.6Sb0.2Te8Se2 (x = 2) a maximum figure of merit of ZT ∼ 1.1 was obtained around 700 K. This value is nearly 1.4 times higher than that of PbTe at 700 K. This enhancement of the figure of merit of Pb9.6Sb0.2Te8Se2 derives from its extremely low thermal conductivity (∼0.7 at W/m.K at 700 K). High resolution transmission electron microscopy of Pb9.6Sb0.2Te10−xSex samples shows broadly distributed Sb-rich nanocrystals, which may be the key feature responsible for the suppression of the thermal conductivity.

The influence of the density of gap states and the band gap width of the intrinsic a-Si:H active layer on the characteristics of a-Si PIN/OLED coupling pair was analyzed by a-Si:H PIN/OLED CAD simulation model. The CAD simulation model was carried out based on a-Si PIN Hack & Shur model and OLED TCL transport model. At the same band gap width, for the intrinsic a-Si:H active layer with the higher density of gap states, the reverse current of a-Si PIN trended to be saturated at the higher reverse bias voltage. As a result, I-V curve of a-Si PIN/OLED around the turn point Vt became smoother with the increase of the density of gap states. At the same state density, the light induced current of a-Si PIN increased against the band gap width, assuming the input light had the same spectrum as AM1.5 solar light. Thus the luminance emitted from OLED increased with the decrease of the band gap width because OLED belongs to the light-emitting device controlled by current. The simulation results also showed that the influence of the state density intensified with the increase of the band gap of a-Si:H.

Solidification of FeSi2 alloy by single-roller rapid solidification technology was studied, and monophase α–FeSi2 ribbons were obtained. Phase evolution of the monophase and metastable α–FeSi2 ribbons during subsequent annealing was studied with in situ electric resistance measurements. The results show that the metastable α–FeSi2 phase transforms into the β–FeSi2 phase at about 620 °C and then transforms into the α–FeSi2 phase again at a higher temperature when heated. A new relatively simple method to prepare bulk β–FeSi2 alloy, that is, formation of bulk β–FeSi2 alloy by annealing monophase α–FeSi2 alloy, is presented.