In-situ laboratory measurements in X-ray diffraction (XRD) high-temperature chamber and detailed XRD measurements at room temperature were used for the study of the thickness, temperature and time dependences of crystallization of amorphous TiO2 thin films. The films deposited by magnetron sputtering, plasma jet sputtering and sol-gel method were analyzed. Tensile stresses were detected in the first two cases. They are generated during the crystallization and inhibit further crystallization that also depends on the film thickness. XRD indicated quite rapid growth of larger crystallites unlike the sol-gel films when the crystallites grow mainly by increasing of annealing temperature.