AlN single crystals were grown on AlN/SiC seeds by sublimation of AlN powder in TaC crucibles in a nitrogen atmosphere. The seeds were produced by metallorganic chemical vapor deposition (MOCVD) of AlN on SiC crystals. The influence of growth temperature, growth time and source-to-seed distance on the crystallinity and the crystal growth rate were investigated. Crystals were grown in an RF heated sublimation reactor at growth temperatures ranging from 1800-2000°C, at a pressure of 600 Torr, nitrogen flow-rate of 100 sccm and source-to-seed distances of 10 and 35 mm. At 1870°C and a source-to-seed distance of 35 mm, isolated crystals were observed with few instances of coalescence. At 1930°C, a source-to-seed distance of 10 mm and longer growth times (~30 hrs), crystal coalescence was achieved. Above 1930°C, the decomposition of SiC was evidently affecting the growth morphology and resulted in growth of polycrystalline AlN. After an initial nucleation period, the observed growth rates (10-30 µm/hr) were in close agreement with predictions of a growth model that assumed gas-phase diffusion controlled growth. Optical and electron microscope observations revealed step-flow growth, while X-ray diffraction results showed the single crystal nature of the grown material. Single crystalline AlN was grown over surface areas of 200-300 mm2 and was transparent and essentially colorless.