La3+ doped yttrium iron garnet films have been grown on (111) oriented gadolinium gallium garnet substrates via Liquid phase epitaxy technique as a basic material for ISHE device fabrication. Pt as a material with a large spin hall angle was used as a spin detection layer. We investigated the dependence of the spin pumping effect on the power and frequency of the excitation microwaves in La:YIG/Pt bilayers by measuring the ISHE voltage. We demonstrated that the area under the ISHE curve(SISHE) across a wide power range had a nearly linear correlation with the input microwave power (Pin). The parameter SISHE can be used to describe the spin current energy in a Pt layer which can be a useful parameter for a microwave rectifier.