In the semiconductor industry, there is a need to establish fundamental, mechanism-based, correlation(s) between process conditions, consumables (e.g., pads and slurries), and observed process performance in Chemical-Mechanical Polishing (CMP). In this paper, we present recent results of studies on polyurethane-based CMP pads in static and dynamic conditions using Dynamic Mechanical Analysis (DMA) to monitor modulus and energy damping changes. Two-layered, composite IC1000 on Suba IV pads, [IC1000 (cast and cured polyurethane elastomer) / Suba IV (polyurethane impregnated polyester felt)], were analyzed: prior to use (fresh); after a 24-hr soak in silica-containing oxide slurry (basic); and after oxide polishing (used). Upon comparison it was observed that a characteristic transition feature due to water is present at sub-ambient temperatures in both the slurry soaked and used pads. Exposure of as-received pads to basic oxide slurry results in a broad, high temperature transition thought to be the result of chemical-induced disruption of macrostructural units. Polishing (load-enhanced chemical exposure) introduces further changes to the polymer network represented by an apparent degradation to the structural species responsible for the high temperature transition in Suba IV.