We present the defect analysis by photoluminescence (PL) spectroscopy of CdSexTe1-x thin films, grown with varying Se content by a co-sputtered deposition method. We observe a peak at 1.203 eV in the CdSexTe1-x film for x = 0.21, which shifts towards higher energies with increase in laser power. This peak was assigned to a donor-to-acceptor (DAP) transition, with a measured j-shift of ∼4.7 meV/decade. Temperature dependent PL intensity measurements confirm that the observed DAP peak involves a shallow defect state of binding energy ∼34.7 meV. In contrast, a free-to-bound (FB) peak at 1.294 eV involving a shallow defect of binding energy ∼18.3 meV was observed in the CdSexTe1-x film for x = 0.14. Additionally, we observe band edge emission at 1.452 eV and 1.448 eV in CdSexTe1-x films for x = 0.14 and x = 0.21 respectively. Our analysis shows that the Se concentration not only changes the band gap energy of the resulting CdSexTe1-x alloy thin film, but also modifies the nature of the dominant observed defect emission.

Methods of obtaining large grain size and high crystallinity in absorber materials play an important role in fabrication of high-performance methylammonium lead iodide (MAPbI3) perovskite solar cells. Here we study the effect of adding small concentrations of Cd2+, Zn2+, and Fe2+salts to the perovskite precursor solution used in the single-step solution fabrication process. Enhanced grain size and crystallinity in MAPbI3 films were obtained by using 0.1% of Cd2+ or Zn2+in the precursor solution. Consequently, solar cells constructed with Cd- and Zn-doped perovskite films show a significant improvement in device performance. These results suggest that the process may be an effective and facile method to fabricate high-efficiency perovskite photovoltaic devices.

Monolithic integrated thin film tandem solar cells consisting of a high bandgap perovskite top cell and a low bandgap thin film bottom cell are expected to reach higher power conversion efficiencies (PCEs) with lower manufacturing cost and environmental impacts than the market-dominant crystalline silicon photovoltaics. There have been several demonstrations of 4-terminal and 2-terminal perovskite tandem devices with CuInGaSe2 (CIGS) or CuInSe2 (CIS) and, similar to the other tandem structures, the optimization of this device relies on optimal choice for the perovskite bandgap and thickness. Therefore, further advancement will be enabled by tuning the perovskite absorber to maximize the photocurrent limited by the current match condition. Here, we systematically study the optical absorption and transmission of perovskite thin films with varying absorber band gap. Based on these results, we model the photocurrent generations in both perovskite and CIS subcells and estimate the performances of projected tandem devices by considering the ideally functioning perovskite and CIS device. Our results show that for perovskite layers with 500 nm thickness the optimal bandgap is around 1.6 eV. With these configurations, PCEs above 20% could be achieved by monolithically integrated perovskite/CIS tandem solar cells. Also by modelling the absorption at every layer we calculate the quantum efficiency at each subcell in addition to tracking optical losses.

CdTe is well known as an excellent photovoltaic material for high efficiency solar cell applications because it has a direct band-gap, low fabrication cost and high optical absorption coefficient. However, the nonradiative recombination and low average minority carrier lifetime caused by the defects in CdTe solar cells limit its efficiency. So far, grain boundaries (GB) have been considered to be the major origin of the nonradiative recombination. However, we show that CdTe grains contain many dislocations that could limit device efficiency. Scanning transmission electron microscopy (STEM) was used to determine the atomic structure of intrinsic and extrinsic stacking faults and their terminating partial dislocation cores. Z-contrast images are sensitive to atomic number and are able to distinguish Cd and Te atomic columns. Unpaired Cd and Te atomic columns were found to form the partial dislocation cores, suggesting the presence of dangling bonds. These defects are likely to be electrically active, and may be the origin of the low minority carrier lifetime.

We study the effect of the spacing between electrodes in very high frequency plasma enhanced chemical vapor deposition on the properties of microcrystalline silicon films and their related n-i-psolar cells. We vary the spacing from 0.2 to 1.0 cm to deposit microcrystalline silicon at 67.8 MHz while maintaining other growth parameters. The spacing between the electrodes significantly changes the plasma conditions, which govern film precursor chemistry as well as introduce etching and ion bombardment to the film; thereby, influencing nucleation and growth of the microcrystalline Si films. The resulting films were characterized by UV-Vis spectrometry, atomic force microscopy, X-ray diffraction, and transmission electron microscopy. We found that deposition rate decreases, while surface roughness and short circuit current density increase with smaller spacing.

Chalcopyrite solar cells based on CuInSe2 and associated alloys have demonstrated high efficiencies, with current annual shipments in the hundreds of megawatts (MW) range and increasing. Largely due to concern over possible indium (In) scarcity, a related set of materials, the kesterites, which comprise Cu2ZnSnS4 and associated alloys, has received increasing attention. Similarities and differences between kesterites and chalcopyrites are discussed as drawn from theory, depositions, and materials characterization. In particular, we discuss predictions from density functional theory, results from vacuum co-evaporation, and characterization via x-ray diffraction, scanning electron microscopy, electron beam-induced current, quantum efficiency, secondary ion mass spectroscopy, and luminescence.

We report on the incorporation of molybdenum into tungsten oxide by co-sputtering and its effect on solar-powered photoelectrochemical (PEC) water splitting. Our study shows that Mo incorporation in the bulk of the film (WO3:Mo) results in poor PEC performance when compared with pure WO3, most likely due to defects that trap photo-generated charge carriers. However, when a WO3:Mo/WO3 bilayer electrode is used, a 20% increase of the photocurrent density at 1.6 V versus saturated calomel reference electrode is observed compared with pure WO3. Morphological and microstructural analysis of the WO3:Mo/WO3 bilayer structure reveals that it is formed by coherent growth of the WO3:Mo top layer on the WO3 bottom layer. This effect allows an optimization of the electronic surface structure of the electrode while maintaining good crystallographic properties in the bulk.

ZnO thin films with significantly reduced band gaps were synthesized by doping N and codoping Al and N at 100 °C. All the films were synthesized by radiofrequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that codoped ZnO:(Al,N) thin films exhibited significantly enhanced crystallinity compared with ZnO doped solely with N, ZnO:N, at the same growth conditions. Furthermore, annealed ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited better photocurrents than ZnO:N films grown with pure N doping, suggesting that charge-compensated donor–acceptor codoping could be a potential method for band gap reduction of wide-band gap oxide materials to improve their photoelectrochemical performance.

Phosphorus and Boron doping effects on the microstructure of nanocrystallites in hydrogenated amorphous and nanocrystalline mixed-phase silicon films were investigated using Raman spectroscopy, secondary ion mass spectrometry, cross-sectional transmission electron microscopy, atomic force microscopy, and conductive atomic force microscopy. The characterizations revealed the following observations. First, the mixed-phase Si:H films can be heavily doped in ˜1021/cm3 by adding PH3 and BF3 in the precursor gases. Second, the intrinsic and doped films can be made in a similar crystalline volume fraction by adjusting hydrogen dilution ratio. The hydrogen dilution ratio is much higher for P-doped films than for the intrinsic film with the similar crystallinity. Third, the doping impacts the nanostructures in the films significantly. Nanograins aggregate to form cone-shaped clusters in the intrinsic and B-doped films but isolate and randomly distribute in amorphous tissues in the P-doped films. The cones in the intrinsic and B-doped films are also different. The cone-angle is smaller and the nanograin density is lower in the B-doped films than in the intrinsic films. These P- and B-doping effects on the nanocrystalline formation are interpreted in terms of diffusions of Si-related radicals during the film growth.

We report on the development of tungsten-oxide-based photoelectrochemical (PEC) water-splitting electrodes using surface modification techniques. The effect of molybdenum incorporation into the WO3 bulk or the surface region of the film is discussed. Our data indicate that Mo incorporation in the entire film (WO3:Mo) results in poor PEC performances, most likely due to defects that trap photo-generated charge carriers. However, compared to a pure WO3 (WO3:Mo)-based PEC electrode, a 20% (100%) increase of the photocurrent density at 1.6 V vs. SCE is observed if the Mo incorporation is limited to the near-surface region of the WO3 film. The resulting WO3:Mo/WO3 bilayer structure is formed by epitaxial growth of the WO3:Mo top layer on the WO3 bottom layer, which allows an optimization of the electronic structure induced by Mo incorporation while maintaining good crystallographic properties.

We present a systematic study on the correlation of hydrogen dilution profiles to structural properties materials and solar cell performance in nc-Si:H solar cells. We deposited nc-Si:H single-junction solar cells using a modified very high frequency (VHF) glow discharge technique on stainless steel substrates with various profiles of hydrogen dilution in the gas mixture during deposition. The material properties were characterized using Raman spectroscopy, X-TEM, AFM, and C-AFM. The solar cell performance correlates well with the material structures. Three major conclusions are made based on the characterization results. First, the optimized nc-Si:H material does not show an incubation layer, indicating that the seeding layer is well optimized and works as per design. Second, the nanocrystalline evolution is well controlled by hydrogen dilution profiling in which the hydrogen dilution ratio is dynamically reduced during the intrinsic layer deposition. Third, the best nc-Si:H single-junction solar cell was made using a proper hydrogen dilution profile, which caused a nanocrystalline distribution close to uniform throughout the thickness, but with a slightly inverse nanocrystalline evolution. We have used the optimized hydrogen dilution profiling and improved the nc-Si:H solar cell performance significantly. As a result, we have achieved an initial active-area cell efficiency of 9.2% with a nc-Si:H single-junction structure, and 15.4% with an a-Si:H/a-SiGe:H/nc-Si:H triple-junction solar cell structure.

We present the results of systematic studies of optical enhancements by textured Ag/ZnO back reflectors in a-SiGe:H and nc-Si:H solar cells. First, the back reflector materials were characterized by AFM, XRD, and TEM. The results showed that the ZnO layers deposited by sputtering exhibit an increased surface texture with the deposition temperature and film thickness. The material structure showed a strong (002) preferential orientation. The large columnar crystal structure determines the surface texture. Second, the solar cell performance was correlated to the back reflector structure. We found that with a thin ZnO layer, a textured Ag layer results in more light scattering than a flat Ag layer. However, when a thick ZnO layer is used, a flat Ag layer can produce similar or more light scattering than a textured Ag layer. Third, we developed a method to estimate the optical enhancement for a-SiGe:H and nc-Si:H solar cells on various structures of Ag/ZnO back reflectors. Comparing the quantum efficiency data from solar cells made using the same recipe but one on a flat stainless steel substrate and another on a textured Ag/ZnO BR substrate revealed that the optical enhancement for the long wavelength light can be as high as 20 to 30. Compared to the theoretical value of 4n2, there is still scope for further improvement

The applicability of atom probe to the characterization of photovoltaic devices is presented with special emphasis on high efficiency III–V and low cost ITO/a-Si:H heterojunction cells. Laser pulsed atom probe is shown to enable subnanometer chemical and structural depth profiling of interfaces in III–V heterojunction cells. Hydrogen, oxygen, and phosphorus chemical profiling in 5-nm-thick a-Si heterojunction cells is also illustrated, along with compositional analysis of the ITO/a-Si interface. Detection limits of atom probe tomography useful to semiconductor devices are also discussed. Gaining information about interfacial abruptness, roughness, and dopant profiles will allow for the determination of semiconductor conductivity, junction depletion widths, and ultimately photocurrent collection efficiencies and fill factors.

High open-circuit voltage (Voc) silicon heterojunction (SHJ) solar cells are fabricated in double-heterojunction a-Si:H/c-Si/a-Si:H structures using low temperature (<225°C) hydrogenated amorphous silicon (a-Si:H) contacts deposited by hot-wire chemical vapor deposition (HWCVD). On p-type c-Si float-zone wafers, we used an amorphous n/i contact to the top surface and an i/p contact to the back surface to obtain a Voc of 667 mV in a 1 cm2 cell with an efficiency of 18.2%. This is the best reported p-type SHJ voltage. In our labs, it improves over the 652 mV cell obtained with a front amorphous n/i heterojunction emitter and a high-temperature alloyed Al back-surface-field contact. On n-type c-Si float-zone wafers, we used an a Si:H (p/i) front emitter and an a-Si:H (i/n) back contact to achieve a Voc of 691 mV on 1 cm2 cell. Though not as high as the 730 mV reported by Sanyo on n-wafers, this is the highest reported Voc for SHJ c-Si cells processed by the HWCVD technique. We found that effective c-Si surface cleaning and a double-heterojunction are keys to obtaining high Voc. Transmission electron microscopy reveals that high Voc cells require an abrupt interface from c-Si to a-Si:H. If the transition from the base wafer to the a-Si:H incorporates either microcrystalline or epitaxial Si at c Si interface, a low Voc will result. Lifetime measurement shows that the back-surface-recombination velocity (BSRV) can be reduced to ~15 cm/s through a-Si:H passivation. Amorphous silicon heterojunction layers on crystalline wafers thus combine low-surface recombination velocity with excellent carrier extraction.