Major depressive disorder with alcohol dependence is an easily recurrent disorder, and its dysfunction has increased risk of recurrence. The main purpose of the family therapy model at issue is to prevent the recurrent major depression with alcoholism patient against recurrent episode.

All three patients have had more than 10 relapses and hospitalizations during the past 5 years. Focuses of the therapy are on the apples drawn by the patient (DDAA), the patient, the couple, and the patient–child relationship. Keywords are gathered from every participant during the therapy session. Besides, the subjects to have verbalized meaningful ideas or successful experiences are immediately, intensely praised by applause. DAILY DRAW AN APPLE (DDAA) homework is that the patient has drawn an apple on a calendar everyday and shares with family members about the apple as well as the patient's feelings of the day. The participants of the therapy are the patient, wife/husband, children and the therapists (psychiatrist, social worker). The frequency of the model is from once weekly to twice monthly. Each session consists of the 10 minutes pre-session, the 40 minutes therapeutic session, the 10 minutes post-session. All patients have never been relapsed over the past 18 months after receiving our family therapy under medications.

Finally, with the aid of the family therapy, they have been almost free from affective symptoms and the ambivalence, guilty feeling toward family, frustrations have been steadily gradually improved. To prevent the recurrent major depression with alcohol dependence patient against recurrent episode has been achieved in family therapy presented here.

This paper investigates the focal location effects on the penetration depth of molten region surrounding a paraboloid of revolution-shaped cavity (i.e. keyhole of this model) irradiated by a moving focused energy beam, which profile of intensity is assumed to be Gaussian distribution. Considering the momentum balance at the base of the keyhole, a quasi-steady-state thermal model relative to a constant-speed moving high-energy beam and paraboloid of revolution-shaped cavity is developed in a parabolic coordinate system. The analytical solution is obtained for this model with the adiabatic condition directly set on the workpiece surface for semi-infinite domain instead of the image method for infinite domain using the separation-of-variables method. The analytical solution of this model gives a reasonable prediction for the cavity temperatures. The predicted relation of the penetration depth to the focal location agrees with the available measured data. The effects of focal convergence angle and spot size on the penetration depth are also discussed.

The effects of stress-aging processing on corrosion resistance of an Al–Zn–Mg–Cu alloy were investigated. It is found that the one-stage stress-aged alloy is strongly sensitive to the electrochemical corrosion. The poor corrosion resistance of the one-stage stress-aged alloy can be attributed to fine intragranular aging precipitates and continuous distribution of grain boundary precipitates. Meanwhile, the incomplete precipitation of solute atoms results in high electrochemical activity of aluminum matrix. However, when the alloy is two-stage stress-aged, the corrosion resistance is greatly improved. Furthermore, the corrosion resistance decreases firstly and then increases with increasing the first stage stress-aging temperature. Increasing external stress can enhance the corrosion resistance of the two-stage stress-aged alloy. These phenomena are mainly related to aging precipitates within grains and along grain boundaries. The coarse and relatively low-density intragranular aging precipitates, as well as the discontinuously distributed grain boundary precipitates can enhance the corrosion resistance of the stress-aged alloy.

Generally, the obvious work hardening, dynamic recrystallization (DRX), and dynamic recovery behaviors can be found during hot deformation of Ni-based superalloys. In the present study, the classical dislocation density theory is improved by introducing a new dislocation annihilation item to represent the influences of DRX on dislocation density evolution for a Ni-based superalloy. Based on the improved dislocation density theory, the peak strain corresponding to peak stress and the critical strain for initiating DRX can be determined, and the improved DRX kinetics equations and grain size evolution models are developed. The physical framework and algorithmic idea of the improved dislocation density theory are clarified. Moreover, the deformed microstructures are characterized and quantitatively correlated to validate the improved dislocation density theory. It is found that the improved dislocation density-based models can precisely characterize hot deformation and DRX behaviors for the studied superalloy under the tested conditions.

The effects of pre-treatments on the precipitate microstructures of an Al–Zn–Mg–Cu alloy are investigated. Meanwhile, the creep-rupture behavior of the under-aged and peak-aged alloys are comparatively analyzed. Additionally, the effects of pre-treatment on the fracture mechanisms are discussed. It is found that the precipitate microstructures are sensitive to pre-treatments. The intragranular precipitates of the peak-aged alloy are larger than those of the under-aged. The precipitate free zone of the peak-aged alloy is wider than that of the under-aged. Some large intergranular precipitates appear on the grain boundaries of the under-aged alloy, and induce the nucleation of microvoids. Eventually, the creep fracture of the under-aged alloy is accelerated. Therefore, the differences in microstructures lead to the shorter creep-rupture life of the under-aged alloy, compared to the peak-aged alloy.

The strain hardening effect and dynamic recovery behavior of a Ni-based superalloy are studied by isothermal compressive tests. A new unified dislocation-density based constitutive model is developed to characterize the strain hardening effect and dynamic recovery behavior of the studied superalloy. In the developed constitutive model, some material parameters (yield stress, strain hardening coefficient, and dynamic recovery coefficient) are assumed as functions of initial grain size, deformation temperature, and strain rate. An iterative algorithm is designed to predict the high-temperature deformation behaviors under time-variant hot working conditions. The hot deformation parameters and material parameters can be updated in each strain increment. Comparisons between the experimental and calculated flow stresses indicate that the developed constitutive model can accurately describe the high-temperature deformation behavior of the studied superalloy. Furthermore, the developed constitutive model is also successfully used for analyzing time-variant hot working processes.

High-pressure in situ angular dispersive x-ray diffraction study on the wurtzite-type InN nanowires has been carried out by means of the image-plate technique and diamond-anvil cell (DAC) up to about 31.8 GPa. The pressure-induced structural transition from the wurtzite to a rocksalt-type phase occurs at about 14.6 GPa, which is slightly higher than the transition pressure of InN bulk materials (∼12.1 GPa). The relative volume reduction at the transition point is close to 17.88%, and the bulk modulus B0 is determined through fitting the relative volume-pressure experimental data related to the wurtzite and rocksalt phases to the Birch–Murnaghan equation of states. Moreover, high-pressure Raman scattering for InN nanowires were also investigated in DAC at room temperature. The corresponding structural transition was confirmed by assignment of phonon modes. We calculated the mode Grüneisen parameters for the wurtzite and rocksalt phases of InN nanowires.

In this work, power and reliability performance of pseudomorphic AIGaAs/InGaAs HEMT's are investigated by 2-D device simulation, spatially-resolved electro-luminescence, light emission spectra analysis, and gate current instabilities. A two-dimensional device simulation was used to exploit the off/on state breakdown origins in the power PHEMT's and to explore the physical mechanisms responsible for light emission in both conditions. A correlation between simulated results and light emission spectra highlights the breakdown origins in PHEMT's.

PHEMT's subjected to off-state breakdown stress and on-state hot carrier stress show changes in device characteristics. While gate leakage current, i.e. a surface leakage component associated with the surface passivation layer is reduced by these stresses, a reduction in drain current, transconductance degradation, and an increase in the impact ionization generated gate current are also observed.

Further improvement in off/on state breakdown voltages and device reliability calls for device structure optimization for lower electric field design, surface passivation treatment for lower surface leakage current, and Schottky barrier enhancement for lower gate current.

Submicron high density devices require multilevel interconnections. In multilevel interconnections, issues relating to planarity, stress voiding of metals and stress cracking of the dielectric(s) play an dominant role.As the levels of interconnect go up so does the stress level. A high stress level in the intermediate dielectric can cause cracks which ultimately lead to device failure. In this paper we present a novel method to detect stress cracking using focussed ion beam. This method is correlated with wet chemical etch process and RIE.The phenomenum of cracking of dielectric(s) is studied and different technology aspects are considered. Using the focussed ion beam a robust dielectric is developed.

TiN diffusion barriers have been widely used in submicron contact structures, due to its good adhesion (to SiO2, W, Al and Si) properties, low diffusivity (for Si, W and Al) and compatibility with TiSi2 processing. The purpose of this paper is to present the results of physical and electrical characterization of contact structures with a TiN barrier and W plugs. Two different barrier metal processes were compared, Viz: sputtered Ti followed by post RTN and Ti/TiN films followed by post RTA in the range of 600° to 800°C. The devices were thermal stressed at 450°C for 7 hrs after W plug formation and Al metallization. Ti/TiN films with post RTA are generally superior barrier layers than Ti films with post RTA as shown by electrical characterization of contact resistance and barrier integrity. The relationship between electrical properties and microstructure for the two different barrier structures is discussed. W/TiN and TiN/TiSi2 interface structures were characterized using high resolution TEM. TiSi2 was found to be epitaxially grown during RTA, under certain process conditions. The crystal structure of TiSi2 was determined from electron diffraction patterns.

The Y‐Ba‐Cu‐0 (YBCO) films were grown on (100)Mg0 substrate by the high pressure DC diode sputtering process. The targets were YBCO compounds made by solid‐state reaction. The sputtering gas was Ar‐50%02, and total pressure was 1.5 torr. As‐deposited superconducting YBCO films can be prepared at low substrate temperature at high discharge current. For Y1Ba2Cu30x target, the atomic ratio Ba/Y in the films almost remains constant (Ba/Y = 1.7) and Cu content monotonically increases with increasing discharge current. The Cu content in the film approaches to that of the target at low discharge current. Concentrations of 0 and 02 + in plasma markedly increase during increase of discharge current. High Cu content at large discharge current may be caused by action of electrical field on Ba+ and Y+.