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We examined the possibility of nucleation and growth of diamond via a hydrogen-free vapor phase route of pulsed laser ablation of a graphite target in a low-pressure pure oxygen atmosphere. The present evidences from microscopic, diffraction and spectroscopic techniques indicate that high-quality (111)-oriented diamond crystals could be nucleated and grown on ultra smooth sapphire (single-crystal α - A12O3)substrates at the temperatures lower than 600°C under the optimized growth conditions of oxygen pressure (around 0.15 Torn) and laser ablation (pulsed laser fluence of 3 x 108 W/cm2 at 5 Hz).
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