To save content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about saving content to .
To save content items to your Kindle, first ensure email@example.com
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about saving to your Kindle.
Note you can select to save to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
Due to a rapid shrinkage in memory devices, backned of the line process experiences great difficulties, especially Al metallization. Furthermore, there is a continuous demands in low line resistance in order to promote device performances. In this article, Al damascene process is proposed as compared to Al patterning process, which suffers from inherent pattering issue at a fine pitch under 70nm. The most difficulties in the development of Al damascene process were to form a stable and void free Al in fine trench and to obtain scratch and corrosions free Al surface. In this study, 50nm beyond fill was successfully achieved by “bottom up growth” of CVD Al. For the process, CVD Al by using Methylpyrroridine Alane (MPA) precursor was deposited on a stacked film of CVD TiN and PVD TiN as a wetting layer, which was followed by PVD Al and reflow, then the Al surface was polished with colloidal silica based slurry.
In addition, electrical property of Al scheme and W scheme was compared with damascene pattern, along with which we demonstrated that around 36% decrease in parasitic capacitance is achievable by decrease of metal line height from 3500A to 1000A on simulation test implying that device performance could be enhanced.
The sliding friction and wear performance of Al–Ni–Co–Si quasicrystalline coatings deposited by the high-velocity oxy-fuel technique were investigated under dry sliding conditions. This study indicated that changes in the imposed sliding test conditions modified the friction and wear behavior of quasicrystalline coatings. Qualitative analysis of the contact interface and wear debris were performed with the aim of understanding the role of the third body on the friction and wear processes. The dependence of the coefficient of friction on the sliding velocity and counterpart material was explained by the stick-slip behavior. It was also shown that test conditions favorable for the formation of thick intermediate layers and the densification of the coating subsurface led to low wear rates. Large cylindrical particles, formed by agglomeration of small wear debris, were suggested as a beneficial factor for the reduction of the coefficient of friction.
Email your librarian or administrator to recommend adding this to your organisation's collection.