Increasing circuit densities produce higher metal wiring aspect ratios, and more difficult feature fill for damascene processing. One method of extending the use of sputter deposition to challenging aspect ratios is to collimate the sputtered flux using a collimator plate, and to avoid randomizing the collimated flux by using low process pressures corresponding to long sputtered atom mean free paths. In this paper, we discuss our fabrication of damascene AI-0.5Cu-2Si and AI-2Mg wiring using both collimated and uncollimated sputtering, and our observations of collimation-induced changes in Al alloy electromigration and microstructure. Our experiments show that collimation has only a small effect on AlCuSi, but a large effect on AIMg. Specifically, the median time to electromigration failure for collimated AIMg was ∼10X the value for uncollimated AlMg and ∼6X the values for collimated and uncollimated AlCuSi. Transmission electron microscope and x-ray diffraction analyses of these films show that the collimation-induced improvement in AIMg t50 is associated with the formation of smaller, lower strain grains which are clustered in very well-oriented (111) domains. We propose that the advantageous AlMg microstructure results from enhanced texture produced by aspects of the collimated deposition active in the absence of incoherent precipitates.