(1-x)K0.5Na0.5NbO3-x(0.97BiScO3-0.03BiCoO3) (KNN-xBSC) piezoelectric ceramics were prepared by the conventional solid-state method, and effects of the BSC addition on the phase structure, relaxor behavior, and electrical properties of KNN ceramics were systematically investigated. The rhombohedral to orthorhombic phase transition around room temperature was identified for the KNN-xBSC ceramics in the composition range of 0.015≤ x ≤0.0175, and improved electrical properties (d33∼205 pC/N, kp∼0.43, εr∼1315, and tan δ∼0.054) were observed for the ceramic with x=0.015 because of the involvement of such a phase transition at room temperature. Moreover, a relaxor ferroelectric behavior is demonstrated for these KNN-xBSC ceramics because of a more complex occupation of A and B sites in the ABO3 perovskite structure, together with a weak ferromagnetic order at room temperature.

This paper reports the microstructure and physical properties of ferroelectric capacitors formed from SrBi2Ta2O9(SBT) layers on Si with various buffer layers including jet-vapor deposited silicon nitride, zirconium oxide, hafnium oxide and thermally grown silicon oxide. Results from cross-sectional transmission electron microscopy (X-TEM), energy dispersive spectroscopy (EDS), X-Ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and non-contact atomic force microscopy (nc-AFM) data coupled with capacitance-voltage (C-V) and current- voltage (I-V) data indicate that both the microstructure and physical properties of SBT films deposited on silicon are dependent on the buffer layer material employed.

Alcogels, aerogel precursors, were prepared by hydrolysis and condensation of the metal alkoxide tetraethylorthosilicate and were catalyzed by both acids and bases, according to a standard reaction. Alcogel solution was spin coated onto p-type silicon wafers and fluid extraction was achieved in an uncontrolled (room temperature, atmospheric pressure) environment. Film porosity was retained through surface modification and/or low vapor pressure solvent techniques. The microstructure and electronic properties of the resulting films were evaluated using non-contact atomic force microscopy (nc-AFM), cross sectional scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Metal insulator semiconductor (MIS) devices were prepared and current-voltage and capacitance-voltage measurements were obtained from these devices. Annealing studies reveal a dramatic temperature dependent effect on both the microstructure and electronic properties of the porous silica films.