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Recent studies have demonstrated that the nutritional properties of peanut meal (PM) can be improved after fermented. The assessment of fermented PM has been reported to be limited to various physical and chemical evaluations in vitro. In this study, PM was fermented by Bacillus natto to explore the effects of fermented PM extract (FE) on growth performance, learning and memory ability and intestinal microflora in mice. Ninety newly weaned male KM mice were randomly divided into eight groups: (N) normal group (n = 20), (LFE) low dose FE group (n = 10), (MFE) middle dose FE group (n = 10), (HFE) high dose FE group (n = 20), and (UFE) unfermented extraction group (n = 10), model group(10) and natural recovery group(10), respectively. Learning and memory skills were performed by the Morris Water Maze (MWM) test, and the variation in gut microbiota composition was assessed by 16S rDNA amplicon sequencing. The results show that HFE remarkably improved the growth performance in mice. In the MWM test, escape latency was shortened in both MFE and HFE group, while the percentage of time, distance in target quadrant, and the numbercrossing over the platform were significantly increased in HFE group. Moreover, the FE played a preventive role in the dysbacteriosis of mice induced by antibiotic, and increased the richness and species evenness of gut microbiota in mice.
The LiCoO2 films were directly deposited on stainless steel (SS) using medium-frequency magnetron sputtering, and the effects of annealing parameters, such as ambiences, temperatures, holding times, and heating rates, were systematically compared based on surface morphologies, crystal structures, and electrochemical properties. The results demonstrate that an aerobic atmosphere with 3.5 Pa is the most important parameter to maintain the performance of LiCoO2 films. The influence of the annealing temperature (>550 °C) ranks second because the formed (101) or (104) planes of LiCoO2 facilitate Li+ migration. A short holding time of 20 min and a moderate heating rate of 3 °C/min are selected to reduce the oxidation or inter-diffusion between the LiCoO2 films and the SS substrate. Finally, the optimal annealing process is confirmed and corresponds to the initial discharge capacity of 37.56 μA h/(cm2 μm) and the capacity retention of 83.81% at the 50th cycle.
In the three-phase (pure donor, pure acceptor, and mixed phases) morphologies of organic solar cells, the mixed phases produce an energy cascade that promotes the generation of free carriers. However, how to optimize the content of the mixed phases is a challenging problem. The authors proposed to control different content of mixed phases in DRTB-T and IDIC blends by additive and solvent vapor annealing (SVA). The authors first formed the largest extent amount of mixed phases by the additive cinene (2%) to inhibit the crystallization of DRTB-T and IDIC. And then, different amounts of mixed phases were achieved by further SVA for different times (from 0 to 50 s) to increase the content of pure DRTB-T and IDIC phases. The energetic offsets (ΔE) of pure and mixed phases gradually decrease from 0.529 to 0.477 eV for different content of mixed phases. When ΔE was 0.498 eV, the highest photocurrent density (Jsc) was obtained. The power conversion efficiency was increased from 3.23% (without any treatment) to 8.54%. Therefore, the authors demonstrated that the optimized content of the mixed phases is critical to device performance.
High-current switching performance of ovonic threshold switching (OTS) selectors have successfully enabled the commercialization of high-density three-dimensional (3D) stackable phase-change memory in Intel’s 3D Xpoint technology. This bridges the huge performance gap between dynamic random access memory (DRAM) and Flash. Similar to phase-change memory, OTS uses chalcogenide-based materials, but whereas phase-change memory reversibly switches between a high-resistance amorphous phase and a low-resistance crystalline phase, OTS freezes in the amorphous phase. In this article, we review recent developments in OTS materials and their performance in devices, especially current density and selectivity. Advantages and challenges of OTS devices in the integration with the phase-change memory are discussed. We introduce the evolution of theoretical models for explaining the OTS behavior, including thermal runaway, field-induced nucleation, and generation/recombination of charge carriers.
The lightest element has carried a heavy burden for half a century. Expectations for the hydrogen economy, first proposed in the 1970s, have been high. But hydrogen as a renewable, low-carbon fuel for vehicles, heating, and energy storage has remained evasive, held back by high costs, low efficiency, and a lack of infrastructure and storage technologies.
Phase-change materials (PCMs) have demonstrated a wide range of potential applications ranging from electronic memories to photonic devices. These applications are enabled by the unconventional portfolio of properties that characterizes crystalline PCMs. Here, we address the origin of these unusual properties and how they are related to the application potential of these materials. Evidence will be presented that the properties are related to an unconventional bonding mechanism. Employing a novel map, which separates solids according to the number of electrons transferred and shared between adjacent atoms, it is shown that PCMs occupy a well-defined region. Depicting physical properties such as the optical dielectric constant as the third dimension in the map reveals systematic property trends. Such trends can be utilized to unravel the origins of the unconventional materials properties or alternatively, as a means to optimize them.
The rapidly growing demand for data storage and processing, driven by artificial intelligence (AI) and other data-intensive applications, is posing a serious challenge for current computing devices based on the von Neumann architecture. For every calculation, data sets need to be shuffled sequentially between the processor, and multiple memory and storage units through bandwidth-limited and energy-inefficient interconnects, typically causing 40% power wastage. Phase-change materials (PCMs) show great promise to break this bottleneck by enabling nonvolatile memory devices that can optimize the complex memory hierarchy, and neuro-inspired computing devices that can unify computing with storage in memory cells. The articles in this issue of MRS Bulletin highlight recent breakthroughs in the fundamental materials science, as well as electronic and photonic implementations of these novel devices based on PCMs.
While fast-switching rewritable nonvolatile memory units based on phase-change materials (PCMs) are already in production at major technology companies such as Intel (16–64 GB chips are currently available), an in-depth understanding of the physical factors that determine their success is still lacking. Recently, we have argued for a liquid-phase metal-to-semiconductor transition (M-SC), located not far below the melting point, Tm, as essential. The M-SC is itself a consequence of atomic rearrangements that are involved in a fragile-to-strong viscosity transition that controls both the speed of crystallization and the stabilization of the semiconducting state. Here, we review past work and introduce a new parameter, the “metallicity” (inverse of the average Pauling electronegativity of a multicomponent alloy). When Tm-scaled temperatures of known M-SCs of Group IV, V, and VI alloys are plotted against their metallicities, the curvilinear plot leads directly to the composition zone of all known PCMs and the temperature interval below Tm, where the transition should occur. The metallicity concept could provide guidance for tailoring PCMs.