Tritiated amorphous silicon was used for the intrinsic layer of a p-i-n hydrogenated amorphous silicon diode. Current versus voltage measurements were carried out on the diode over time under dark and illuminated conditions. There was a decrease in the forward characteristic of the diode when measured under dark conditions and there was a decrease in photovoltaic power. These changes can be explained by the creation of dangling bonds when bonded tritium atoms decay. By annealing the diode at 125 °C, most of its photovoltaic properties could be recovered. It was also found that luminescence could be recovered in tritiated amorphous silicon by thermal annealing.