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Characterization of InGaN Quantum Wells Grown by Molecular Beam Epitaxy (MBE) Using Ammonia as the Nitrogen Source
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.37
- Print publication:
- 1999
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P-type Mg-doped GaN grown by molecular beam epitaxy using ammonia as the nitrogen source
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 169
- Print publication:
- 1995
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- Article
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High Pressure Optical Studies of GaSb-AlSb Multiple Quantum Wells
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- Journal:
- MRS Online Proceedings Library Archive / Volume 160 / 1989
- Published online by Cambridge University Press:
- 28 February 2011, 751
- Print publication:
- 1989
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- Article
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