The spectral transmittance, reflectance and emittance of silicon related materials and structures are measured simultaneously utilizing a spectral emissometer operating at near- and mid-IR spectral range and temperature range of 300 to 1500K. Several kinds of samples have been considered here: a) SiO2/Si with oxide in the thickness range of 653–5124A, b) SiO2/Si/ SiO2 with oxide thickness of 5000A on both front and back sides c)Multi-layers of SiO2/Si/ SiO2/poly-Si, with backside oxide of 1600A and 250A, respectively and d) separation by implantation of oxygen (SIMOX), with embedded oxide thickness of 4000A. An extensive analysis has been performed to interpret and compare the results obtained from these measurements.
Concerning the SiO2/Si, we find that the experimental results are in accord with the sinusoidal relation of emissivity as a function of the silicon oxide thickness and hence the Applied Materials model. Experimental results on SiO2/Si/SiO2 are also presented here. For the multi-layers of SiO2/Si/SiO2/poly-Si, it is interesting to note that for temperatures above 600°C, the emissivity is independent of temperature and wavelength for the backside oxide thickness of 1600 and 250A. SIMOX measurements are presented as well. The Fiory model has been utilized extensively to investigate the high temperature emissivity data. The applications and limitations of this model are discussed.