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Here we review the potential of ILB 938 (IG 12132 – doi: 10.18730/60FD2), a unique faba bean accession originating from the Andean region of Colombia and Ecuador, maintained at ICARDA – International Center for Agricultural Research in the Dry Areas, with resistance to multiple biotic and abiotic stresses and carrying some useful morphological markers. It has been used as a donor of leaf-related drought adaptation traits and chocolate spot (Botrytis fabae) resistance genes in faba bean breeding programmes worldwide. From generated populations of recombinant inbred lines, quantitative traits loci associated with these useful traits have been mapped. Other markers, such as a lack of stipule-spot pigmentation and clinging pod wall, show the presence of unusual changes in biochemical pathways that may have economic value in the future.
This article analyzes the interplay between Nazi cultural politics and regional identity in the Palatinate region of Germany through the lens of the Ludwig Siebert program. Created by Bavarian Minister-President Ludwig Siebert in the early 1930s to stimulate the regional construction industry, this program involved the conservation of medieval castles and ruins in Bavaria and the Palatinate. The renovation of these monuments, which had been central to the cultural memory and identity of Pfälzers since at least the nineteenth century, proved to be effective in mobilizing the local populace for Siebert's aims and, consequently, for the goals of the Nazi regime. Because its melding of cultural politics and regional identity helped to stabilize the regime in the Palatinate during its early years, the Siebert program provides a particularly illustrative microhistorical case study of the Nazi regime's mechanisms for creating the Volksgemeinschaft in the provinces. By focusing on the Palatinate town of Annweiler, which sits at the foot of the storied Trifels castle, a favored renovation project of Siebert's, this article offers a closely observed demonstration of these mechanisms at work.
Primitive reflexes and parkinsonian signs are used by clinicians to differentiate among dementias. We reviewed our clinical sample to determine whether primitive reflexes were more prevalent in frontally-based dementias and whether parkinsonian signs were more common in dementia with Lewy bodies (DLB) than in other types of dementia.
We retrospectively reviewed charts from 204 patients with dementia who presented for consultation at Baycrest's Ross Memory Clinic between April, 2003, to December, 2007.
A greater proportion of subjects with DLB and dementia of the Alzheimer type with cardiovascular disease had primitive reflexes than subjects with frontotemporal dementia (FTD). Primitive reflexes were not positively predictive of FTD or vascular dementia (VaD). Dementia with Lewy bodies subjects were more likely to have parkinsonian signs than the other dementias, and bradykinesia and rigidity were positively predictive of FTD. The palmomental reflex was the most common primitive reflex in the sample, and cogwheeling was the most common parkinsonian sign. There was no significant difference between early- and late-stage groups in presence of primitive reflexes or parkinsonian signs.
Primitive reflexes appear not to be clinically discriminative of frontally-based dementias such as FTD and VaD.
Two dimensional hole and electron gases in wurtzite GaN/AlxGa1-xN/GaN heterostructures are induced by strong polarization induced effects. The sheet carrier concentration and the confinement of the two dimensional carrier gases located close to one of the AlGaN/GaN interfaces are sensitive to a high number of different physical properties such as polarity, alloy composition, strain, thickness and doping. We have investigated the structural quality, the carrier concentration profiles and electrical transport properties by a combination of high resolution x- ray diffraction, Hall effect and C-V profiling measurements. The investigated heterostructures with N- and Ga-face polarity were grown by metalorganic vapor phase or plasma induced molecular beam epitaxy covering a broad range of alloy compositions and barrier thickness. By comparison of theoretical and experimental results we demonstrate that the formation of two dimensional hole and electron gases in GaN/AlGaN/GaN heterostructures both rely on the difference of the polarization between the AlGaN and the GaN layer. In addition the role of polarity on the carrier accumulation at different interfaces in n- and p-doped heterostructures will be discussed in detail
We present an investigation of electron cyclotron resonance plasma etching induced damage of the 2-dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures using low temperature photoluminescence (PL), electron paramagnetic resonance (EPR) and the Shubnikov-de Haas (SdH) effect. Dry etching of half of the 20 nm top layer of GaAs results in a decrease of the single-particle relaxation time by 20 - 50%, while the concentration of a surface-related paramagnetic defect increases by about one order of magnitude. At the same time, the PL intensity decreases by a factor of 5 - 10. Plasma hydrogenation experiments, annealing and wet etching experiments have been carried out, and the different characterization results are related to each other. We find that passivation in a hydrogen plasma, which leads to a strong increase of the PL intensity of etched as well as unetched samples, causes damage to the transport properties of the 2DEG. The defect concentration is not related in a simple way to the changes of optical and transport properties.
In this paper we present contact-free measurement techniques which are important for the evaluation of heterojunctions of interest for optical as well as high-speed devices. The techniques are the microwave-detection of Shubnikov-de Haas oscillations, photoluminescence-detected magneto-oscillations, and optically detected cyclotron resonance using microwaves (ODCR) as well as far-infrared lasers (FIR-ODCR). The techniques are illustrated by several examples, and the possibilities to determine 2D carrier concentrations, effective masses, and scattering times in the heterojunction structures are discussed.
Depuis la dernière Assemblée générale, notre commission a eu le regret de perdre deux de ses membres les plus éminents: M. Paul Stroobant, directeur de l’Observatoire Royal de Belgique et M. W. H. Pickering, ancien directeur des succursales de l’Observatoire de Harvard à Arequipa (Pérou) et Mandeville (Jamaïque). Les recherches de M. Paul Stroobant se rapportent pour une grande partie aux planètes, notamment Mercure, Vénus, les petites planètes et Saturne dont il étudia pendant des années les anneaux. Il faisait partie de notre Union comme président de la 5e commission et membre de beaucoup d’autres.
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