Limited Reaction Processing (LRP) is a new technique which combines Rapid Thermal Processing (RTP) and Chemical Vapor Deposition (CVD). The added temperature control provided in rapid thermal processing enables the use of substrate temperature as a reaction switch. In addition, rapid thermal technology has been shown to provide other advantages for chemical vapor deposition of Si and III–V materials. Results are presented for group IV materials including epitaxial Si, SiGe alloys, SiO2 , and polysilicon. MOSFETs have been demonstrated and sensitive tests of interface quality are presented, paving the way for future bipolar transistor fabrication. III–V materials such as GaAs, AlGaAs, InGaAs have been grown. GaAs electron mobilities are the best reported for material grown using trimethylarsenic. As-ambient rapid thermal anneals of GaAs have also been performed.