Silicon wafers have been implanted with H+ (90 keV) to doses of 5.0E15/ cm2 and 2.OE16/cm2. The wafers were annealed in nitrogen at temperatures between 450 and 700°C for times between 10 and 60 min. The electrically active carrier profiles were measured by capacitance voltage and spreading resistance techniques. The residual damage was measured by TEM and RBS. The electrical measurements were essentially the same in both FZ and CZ silicon implying that oxygen is not playing a role in the donor formation which was observed. The donor concentration peaks near the projected range of the hydrogen after annealing at temperatures between 450–500°C. As reported previously 1000 H+ ions generate 1 donor in the implant peak. In addition, the donor concentration between the surface and Rp has increased more than a factor of 10 above the background concentration after a 450°C 10 min anneal. Anneals of 550°C for 30 min or more annihilates essentially all of the donors. The RBS results show small amounts of damage for the 5.0E15/cm2 implant dose but considerable crystal damage with a dose of 2.0E16/cm2, even after a 500°C, 30 min anneal. Cross-sectional TEM analysis of 500°C annealed samples showed a large number of small loops at depths corresonding to the depth of the peak electrical carrier concentration. The donors are directly correlated to the implant damage and resultant defects. SIMS data shows little diffusion for anneals of 500°C or less but after 550°C, 30 min the peak H concentration decreases by approximately a factor of 10.