The formation of a Ba-Te surface on GaAs has been investigated. The surface was created using molecular beam epitaxy (MRS). A GaAs (100) surface was first exposed to Te and characterized using x-ray photoelectron spectroscopy (XPS), reflective high energy electron diffraction (RHEED) and low energy electron diffraction (LEED). The Te-reacted surface was then exposed to BaF2 flux producing a second reaction. In this reaction, the BaF2 dissociated leaving barium on the surface but no fluorine. This is in contrast to the clean (no tellurium) GaAs (100) surface in which BaF2 has been shown to grow single crystal. Although high order exists during early stages of the Ba-Te growth, further exposure gives way to a polycrystalline form. This paper discusses the formation and analysis of the Ba-Te surface.