The parameters of trapping centers in CVD diamond and Diamond-Like Carbon (DLC) films were studied by Charge Deep Level Transient Spectroscopy (Q-DLTS). The concentrations, activation energies, captures cross-section and location of the trapping centers were determined. The influence of post deposition heat treatment on the defect center parameters was studied. The Q-DLTS measurements showed that micro defects are acting as point trapping centers and have the continuous energy spectrum with one or two maximums at different energies. The nature of the trapping centers is discussed.