The influence of electron and ion irradiation on the adhesion at chromium-copper thin film interfaces has been studied. The measurements were carried out with different types and thicknesses of well-characterized oxides at the interfaces. The electron energies were varied between 5 and 10 keV, with doses up to 10 18cm −2. lons of He +Ne+and P+ were used in the range of energies between 150 keVand 1.0 MeV, with fluences ranging from 1015 cm−2 to 6× 10 16cm−2 . Substantial improvement of the adhesion is observed in cases where the beam has a significant nuclear stopping power component. Electronic processes may also play a role in improving adhesion, although they are not dominant in the case of the present films.