Complex formation at indium and cadmium impurities implanted into samples of 3C-, 4H-and 6H- SiC was investigated by means of Perturbed Angular Correlation (PAC)-Spectroscopy. After annealing at 1600 K up to five different configurations characterized by their specific electric field gradients (EFG(i)) were observed in 6H- SiC, only four complexes in 4H- SiC; in the 3C- modification no complex was observed. All EFG's are axially symmetric and are oriented along the c- axis of the crystal. In a highly nitrogen doped 6H- SiC epi- layer an new EFG was observed. It is tentatively assigned to a close indium- nitrogen pair.