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Ethylene glycol modified precursors, such as tetrakis(2-hydroxyethyl)orthosilicate (EGMS) or bis(2-hydroxyethyl)titanate (EGMT), have distinct advantages in the synthesis of mesoporous materials by sol-gel processing compared to the commercially available tetraalkoxide precursors. The glycols released upon hydrolysis have proven to be compatible with lyotropic surfactant mesophases and in addition, these precursors allow for processing in purely aqueous conditions. Besides the standard characterization of the resulting titania and silica-based materials by XRD, electron microscopy, and nitrogen sorption, the potential of the titania-based materials for catalytic applications was tested using Au/TiO2 catalysts in low temperature CO oxidation reactions.
The damage production in the Si9Ge6 superlattices (SLs) upon implantation of 150 keV Ar+ ions at 300 K was studied my means of the cross-sectional transmission electron microscopy (XTEM) and electron microdiffraction. It was found that the amorphization occurs in a narrow dose range of (1 – 2) × 1014 cm-2 via accumulation of point defects. The conclusion drawn earlier (Mater. Sci. Forum 248-249, 289 (1997)) on the coherent amorphization of the Si and Ge layers in the SLs was confirmed. Possible mechanisms of the layer interaction leading to the observed behavior are discussed.
Epitaxial wurtzite aluminum nitride (AIN) films have been grown on (111) oriented silicon substrates by plasma-assisted solid source molecular beam epitaxy (MBE). The growth has been performed in the two-dimensional (2D) growth mode. Occuring surface reconstructions have been monitored by reflection of high-energy electron diffraction (RHEED). The films have been characterized by atomic force microscopy (AFM) and transmission electron microscopy (TEM). 2D grown films exhibit atomically smooth surfaces, are singlecrystalline and void of oriented domains. High-resolution (HR) TEM micrographs of the heterointerface show the presence of an interfacial atomic arrangement where (5:4) unit cells coincide along the AIN/Si direction.
Surface acoustic wave (SAW) properties of MBE-grown AIN(0001)/Si(ll1) have been studied for the first time. The AIN film exhibits very good piezoelectricity. The SAW time response indicates low scattering of the waves during their propagation. An electromechanical coupling coefficient (EMC) of 0.07% has been measured for the present interdigital transducer (IDT) geometry.