A thin metal film with nano-apertures, called “nano-mesh electrode,” generates near-field lights near the electrode. We investigated carrier excitations in semiconductors by the near-field light. Finite-difference time-domain (FDTD) method revealed that when the infrared light irradiates the Au nano-mesh electrode on Ge, near-field lights are generated and absorbed in the surface region of the Ge. In order to measure the photocurrent involved by near-filed lights, we fabricated a Schottky cell and applied a Au nano-mesh electrode on the n-type Ge. The efficiency of the Schottky cell with the Au nano-mesh electrode improved in infrared region compared to plain the Au-film Schottky cell. The agreement between theoretical simulations and experiments indicates that near-field lights enhance the carrier excitation in the semiconductor.