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Contents
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Section III - Alternative field effect devices
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Section II - Tunneling devices
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Contributors
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Section IV - Spin-based devices
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11 - Mechanical switches
- from Section III - Alternative field effect devices
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Preface
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Index
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Section I - CMOS circuits and technology limits
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Frontmatter
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CMOS and Beyond
- Logic Switches for Terascale Integrated Circuits
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Section V - Interconnect considerations
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Study of Germanium Epitaxial Recrystallization on Bulk-Si Substrates
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- MRS Online Proceedings Library Archive / Volume 1252 / 2010
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- 01 February 2011, 1252-I07-03
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- 2010
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Optimization of Flash Annealing Parameters to Achieve Ultra-Shallow Junctions for sub-45nm CMOS
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- MRS Online Proceedings Library Archive / Volume 1070 / 2008
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- 01 February 2011, 1070-E04-04
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- 2008
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Short-Time Hydrogen Passivation of Poly-Si CMOS Thin film Transistors by High Dose Rate Plasma Ion Implantation
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- MRS Online Proceedings Library Archive / Volume 396 / 1995
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- 21 February 2011, 515
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- 1995
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