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The surface passivation of Si wafer by AlOx thin films grown by mist CVD in an open-air atmosphere was studied with a view to improving the effect of high-performance c-Si solar cells. In AlOx thin film grown at a temperature above 400°C by mist CVD, the OH bonding did not remain in the film and the breakdown field (EBD) was over 6 MV/cm. In Si wafers passivated by AlOx thin films grown by mist CVD at growth temperature above 400°C, the negative fixed charge density (Qf) at the interface was higher than 1012 cm-2 and the surface recombination velocity (Seff) was 44.4 cm/s. These results show that mist CVD, which is fundamentally an environmentally friendly technique, may be suitable for the fabrication of a passivation film on Si surfaces designed to improve the effect of high-performance c-Si solar cells.
Deposition of Zn1-xMgxO thin films on glass substrates has been investigated by the simple and cost-effective mist CVD technique. A water solution of zinc acetate and magnesium acetate was used as the source of Zn and Mg. The solution was ultrasonically atomized, and the aerosols hence formed were supplied by the N2 carrier gas to the substrates. The band gap energy of ZnMgO was successfully controlled from 3.25 eV (ZnO) to 3.75 eV with the concentration ratio [Mg]/([Zn]+[Mg]) in the solution. The transparency in the visible region was higher than 90% and the surface RMS roughness was 7.5 nm (an example for ZnO) despite the polycrystalline structure; they are satisfactory for the optical applications. A UV photodetctor with interdigital electrode structure on the ZnMgO surface was fabricated, where the photoresponsivity of 2.6 A/W at 350 nm and the lowest detectable power of about 1 μW were obtained. Although these values are satisfactory for the simple UV detection but the existence of deep defects is deteriorating the dynamic response of the detector device.
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