Recent progress of SOI growth by electron beam recrystallization is
described. Transient temperature profile on the recrystallizing sample
surface was analyzed experimentally by direct observation with a
thermovision, which is essential for the understanding of crystal growith
mechanism. SOI growth was performed by a spot beam annealing and a
pseudo-line shaped beam annealing. The line shaped electron beam has been
proved to be useful for large area crystallization.
Emphasis was placed on lateral seeded recrystallization of silicon layer
evaporated in an ultra high vacuum. Silicon layers with the seed area grown
epitaxially during the evaporation and above 1 μm thickness were
successfully recrystallized, resulting in reproducible lateral epitaxiy. The
pseudo-line shaped electron beam formed by very high frequency oscillation
enabled dimensional enlargement of lateral epitaxial growth. crystalline
properties were characterized by analyses of Rutherford backscattering and
electron channeling pattern.