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We report systematic characterizations of flicker noise in GaN based MODFETs. Flicker noise was measured across the channel of the devices from room temperature to 130 K. The voltage noise power spectra, SV(f) were found to be proportional to 1/fγ, where γ depends on the device temperature as well as the gate bias. Study of SV(f) as a function of the biasing condition was conducted in detail and was found to vary as VD2/(VG−VT)β where β changes with temperature from about 2.1 at room temperature to about 0.9 at 130K. Analyses of the data showed that the noise originated from thermal activation of carriers to localized states in the channel area. The data suggested that the trapping and detrapping of carriers did not lead to fluctuations in the carrier concentration as postulated in the McWhorter’s model. However, more work is needed to determine if surface mobility fluctuations played key role in the 1/f noise.
The interaction of InN epitaxial films grown by r.f. plasma assisted molecular beam epitaxy with atomic hydrogen and nitrogen, produced by remote r.f. H2 and N2 plasmas, is investigated. InN strongly reacts with both atomic hydrogen and nitrogen yielding depletion of nitrogen and concurrent formation of In clusters. The impact of hydrogen treatments on the optical properties of InN is assessed using photoluminescence (PL). It is found that hydrogen suppresses the intense PL band peaked at approximately 0.7eV for the as-grown InN epitaxial layers, and results in the appearance of a new PL band whose peak energy and intensity increase with H-dose. The effect of exposure to atomic hydrogen and nitrogen on electrical properties of InN is investigated using Hall effect measurements. Atomic force microscopy is also used for studying the morphological changes of InN upon interaction with atomic hydrogen and nitrogen.
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