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Si1-xGex alloys show the high power generating efficiency as a thermoelectric- conversion material. We evaluate the thermoelectric power of the n-type SiGe system on the basis of the first principles calculations. The electronic-band-structure calculation is performed using all-electron full-potential linearized augmented-plane-wave (FLAPW) method within the local density approximation (LDA). The Seebeck coefficient is analyzed by the Bloch-Boltzmann equation. We find that the ordered rhombohedral SiGe has high Seebeck coefficient in comparison with zincblende SiGe. The efficiency of the thermoelectric power in Si1-xGex is gained by the local atomic configuration rather than the Ge concentration.
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