This paper presents kinetic data for the rapid thermal oxidation (RTO) of <100 silicon using a wall stabilized low pressure arc lamp as the heating source. The data shows a single activation energy of 1.31 eV over the temperature range of 900°C to 1200°C and times of 60 seconds to 240 seconds. Comparisons are made with published kinetic data of RTO using tungsten-halogen lamp source  and with furnace oxidation kinetics for short times (<240 sec.) . “Wet” oxidation results using O2:H2 as the oxidizing ambient reveal a lower activation energy and preexponential coefficient than the dry oxidation. Also presented are results using an experimental set-up which exhibits ultraviolet enhanced oxidation.