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1 results

  • Characterization of p-type 4H-SiC epitaxial layer grown on (11-20) substrate

  • Kazutoishi Kojima, Toshiyuki Ohno, Mituhiro Kushibe, Koh Masahara, Yuuki Ishida, Tetuo Takahashi, Takaya Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai
  • Journal:
    MRS Online Proceedings Library Archive / Volume 680 / 2001
    Published online by Cambridge University Press:
    21 March 2011, E9.2
    Print publication:
    2001

  • Growth and characterization of p-type 4H-SiC epitaxial layers grown on (11-20) substrates are reported. P-type 4H-SiC epilayers with smooth surface morphology have been grown on (11-20) substrates by low-pressure, hot-wall type CVD with SiH4–C3H8–H2–TMA system. The doping concentration can be controlled in the range from about 1×1016cm−3 to 1×1019cm−3. Anisotropy of the crystalline quality is observed by x-ray diffraction measurement. P-type epilayers, in which near band-gap emissions are dominated and D-A pair peak is not observed, are obtained. Hole mobility of (11-20) epilayers is smaller than that of (0001) epilayers probably due to the lack of crystalline quality compared to (0001) epilayers. The results of both low-temperature photoluminescence and the temperature dependence of Hall effect measurements indicate that the boron concentration as undoped impurity in (11-20) epilayer is lower than that of (0001) epilayer. This may be caused by the smaller incorporation efficiency of boron into (11-20) epilayer than that of (0001) epilayer.